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H05N60F-VB Product details
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H05N60F-VB MOSFET Product Introduction
**H05N60F-VB** is a high voltage N-Channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed for high voltage and high power applications. It has a maximum drain-source voltage of 650V, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. The on-resistance of this MOSFET is 2560mΩ @ VGS=10V, and the maximum drain current is 4A. The H05N60F-VB is a reliable choice for circuits and equipment that need to handle high voltage and high power.
**H05N60F-VB** is a high voltage N-Channel MOSFET packaged in TO220F. This MOSFET uses Plannar technology and is designed for high voltage and high power applications. It has a maximum drain-source voltage of 650V, a gate-source voltage range of ±30V, and a threshold voltage of 3.5V. The on-resistance of this MOSFET is 2560mΩ @ VGS=10V, and the maximum drain current is 4A. The H05N60F-VB is a reliable choice for circuits and equipment that need to handle high voltage and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
1. **High-voltage switching power supply**:
The high withstand voltage characteristics of the H05N60F-VB make it very effective in high-voltage switching power supply applications. It can withstand drain-source voltages up to 650V, making it very suitable for use in high-voltage DC-DC converters and switching power supply designs to ensure the stability and safety of the power supply system.
2. **High-power electronic devices**:
In electronic devices that require high power handling, the H05N60F-VB can provide reliable switching performance. With its maximum drain current of 4A, it can efficiently handle high-power loads in power amplifiers and motor drive applications.
3. **Motor control**:
This MOSFET is suitable for motor control systems, especially those that require high voltage and high power handling capabilities. It can effectively control the start and stop and speed regulation of the motor to ensure the stable operation of the motor drive system.
4. **High-voltage DC circuit**:
In high-voltage DC circuits, the 650V maximum drain-source voltage of the H05N60F-VB enables it to safely handle high voltage conditions. It is suitable for high-voltage DC switching and power management applications, ensuring the reliability and safety of high-voltage circuits.
1. **High-voltage switching power supply**:
The high withstand voltage characteristics of the H05N60F-VB make it very effective in high-voltage switching power supply applications. It can withstand drain-source voltages up to 650V, making it very suitable for use in high-voltage DC-DC converters and switching power supply designs to ensure the stability and safety of the power supply system.
2. **High-power electronic devices**:
In electronic devices that require high power handling, the H05N60F-VB can provide reliable switching performance. With its maximum drain current of 4A, it can efficiently handle high-power loads in power amplifiers and motor drive applications.
3. **Motor control**:
This MOSFET is suitable for motor control systems, especially those that require high voltage and high power handling capabilities. It can effectively control the start and stop and speed regulation of the motor to ensure the stable operation of the motor drive system.
4. **High-voltage DC circuit**:
In high-voltage DC circuits, the 650V maximum drain-source voltage of the H05N60F-VB enables it to safely handle high voltage conditions. It is suitable for high-voltage DC switching and power management applications, ensuring the reliability and safety of high-voltage circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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