中文
English
H05N50F-VB Product details
Back to previous pageProduct introduction：
H05N50F-VB MOSFET Product Introduction
H05N50F-VB is a high voltage single N-channel MOSFET in TO220F package. This MOSFET has a drain-source voltage (V_DS) of up to 650V and a large maximum drain current of 7A. Its Plannar technology design ensures stability and reliability under high voltage conditions. Although its on-resistance is relatively high, it can still show excellent switching characteristics and reliability in many high voltage applications.
H05N50F-VB is a high voltage single N-channel MOSFET in TO220F package. This MOSFET has a drain-source voltage (V_DS) of up to 650V and a large maximum drain current of 7A. Its Plannar technology design ensures stability and reliability under high voltage conditions. Although its on-resistance is relatively high, it can still show excellent switching characteristics and reliability in many high voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: H05N50F-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 650V
- **Gate-Source Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 1100mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 7A
- **Technology**: Plannar
- **Model**: H05N50F-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 650V
- **Gate-Source Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-Resistance(R_DS(ON))**:
- 1100mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
The high withstand voltage and good current carrying capacity of the H05N50F-VB MOSFET make it suitable for a variety of high voltage applications:
1. **High Voltage Switch**: The high drain-source voltage (V_DS) of the H05N50F-VB reaches 650V, making it suitable for high voltage switching applications such as power switches for industrial equipment and high voltage switch control systems. In these applications, it can stably switch high voltage loads and provide reliable control.
2. **Power Converter**: In high voltage power converters and inverters, the H05N50F-VB can be used as the main switching element to handle high voltage input and output. Its high withstand voltage characteristics ensure safety and reliability under high voltage operating conditions.
3. **Household Appliances**: In household appliances such as air conditioners, microwave ovens and washing machines, the H05N50F-VB can be used for high voltage control and protection circuits. Its high voltage withstand design ensures the safety and stability of the appliance under high voltage operation.
4. **Power Amplifier**: In power amplifiers and other high power applications, the H05N50F-VB is able to provide stable high voltage control, helping to improve amplifier efficiency and performance. Its high voltage withstand capability is suitable for handling the switching needs in high voltage and high power applications.
These features make the H05N50F-VB an ideal choice for applications that require high voltage handling and high current carrying capabilities.
The high withstand voltage and good current carrying capacity of the H05N50F-VB MOSFET make it suitable for a variety of high voltage applications:
1. **High Voltage Switch**: The high drain-source voltage (V_DS) of the H05N50F-VB reaches 650V, making it suitable for high voltage switching applications such as power switches for industrial equipment and high voltage switch control systems. In these applications, it can stably switch high voltage loads and provide reliable control.
2. **Power Converter**: In high voltage power converters and inverters, the H05N50F-VB can be used as the main switching element to handle high voltage input and output. Its high withstand voltage characteristics ensure safety and reliability under high voltage operating conditions.
3. **Household Appliances**: In household appliances such as air conditioners, microwave ovens and washing machines, the H05N50F-VB can be used for high voltage control and protection circuits. Its high voltage withstand design ensures the safety and stability of the appliance under high voltage operation.
4. **Power Amplifier**: In power amplifiers and other high power applications, the H05N50F-VB is able to provide stable high voltage control, helping to improve amplifier efficiency and performance. Its high voltage withstand capability is suitable for handling the switching needs in high voltage and high power applications.
These features make the H05N50F-VB an ideal choice for applications that require high voltage handling and high current carrying capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
