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H04N65F-VB Product details
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H04N65F-VB MOSFET Product Introduction
**H04N65F-VB** is a high voltage N-channel MOSFET in TO220F package. It uses Plannar technology and is designed to handle high voltage and high power applications. This MOSFET can withstand drain-source voltages up to 650V, and has high voltage withstand capability and stable switching performance. H04N65F-VB is suitable for power systems, power converters and other high voltage applications that require high voltage handling and reliable switching.
**H04N65F-VB** is a high voltage N-channel MOSFET in TO220F package. It uses Plannar technology and is designed to handle high voltage and high power applications. This MOSFET can withstand drain-source voltages up to 650V, and has high voltage withstand capability and stable switching performance. H04N65F-VB is suitable for power systems, power converters and other high voltage applications that require high voltage handling and reliable switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H04N65F-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 650V
- **Gate to Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 4A
- **Technology**: Plannar Technology
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 650V
- **Gate to Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 4A
- **Technology**: Plannar Technology
Domain and module applications：
Application fields and module examples
1. **High voltage power converter**: The high drain-source voltage capability of the H04N65F-VB makes it ideal for use in high voltage power converters, such as inverters and buck-boost converters used in power electronics. In these applications, MOSFETs are able to efficiently handle high voltages and ensure stable power conversion.
2. **Switching power supply**: In high voltage switching power supplies (SMPS), the H04N65F-VB can be used as the main switching element. Its high voltage tolerance and high on-resistance are suitable for applications that require high withstand voltage and high power handling, ensuring the stability and reliability of the power supply.
3. **Power management system**: In various power management systems, such as power switching modules in industrial equipment and home appliances, the H04N65F-VB is able to provide reliable switching performance and high withstand voltage capability. This enables it to work stably in high voltage environments and protect the system from voltage spikes and overloads.
4. **Lighting control**: In high-power lighting control systems, such as fluorescent lamps or LED drivers, the high voltage capability and stable switching performance of the H04N65F-VB make it suitable for controlling the on/off state of high-power lamps, providing efficient and reliable lighting solutions.
These applications demonstrate the wide applicability of the H04N65F-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high voltage resistance and reliable switching performance.
1. **High voltage power converter**: The high drain-source voltage capability of the H04N65F-VB makes it ideal for use in high voltage power converters, such as inverters and buck-boost converters used in power electronics. In these applications, MOSFETs are able to efficiently handle high voltages and ensure stable power conversion.
2. **Switching power supply**: In high voltage switching power supplies (SMPS), the H04N65F-VB can be used as the main switching element. Its high voltage tolerance and high on-resistance are suitable for applications that require high withstand voltage and high power handling, ensuring the stability and reliability of the power supply.
3. **Power management system**: In various power management systems, such as power switching modules in industrial equipment and home appliances, the H04N65F-VB is able to provide reliable switching performance and high withstand voltage capability. This enables it to work stably in high voltage environments and protect the system from voltage spikes and overloads.
4. **Lighting control**: In high-power lighting control systems, such as fluorescent lamps or LED drivers, the high voltage capability and stable switching performance of the H04N65F-VB make it suitable for controlling the on/off state of high-power lamps, providing efficient and reliable lighting solutions.
These applications demonstrate the wide applicability of the H04N65F-VB MOSFET in high-voltage and high-power environments, especially in power management and control systems that require high voltage resistance and reliable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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