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H02N65F-VB Product details
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H02N65F-VB MOSFET Product Introduction
H02N65F-VB is a high voltage N-channel MOSFET packaged in TO220F. This MOSFET is designed for high voltage applications, with a high voltage rating and moderate on-resistance. It uses Plannar technology and is suitable for use in high voltage, low current applications. The design goal of H02N65F-VB is to provide stable switching performance and reliability, especially for applications that require high voltage and good thermal management.
H02N65F-VB is a high voltage N-channel MOSFET packaged in TO220F. This MOSFET is designed for high voltage applications, with a high voltage rating and moderate on-resistance. It uses Plannar technology and is suitable for use in high voltage, low current applications. The design goal of H02N65F-VB is to provide stable switching performance and reliability, especially for applications that require high voltage and good thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1700mΩ @ VGS = 10V
- **Continuous drain current (ID):** 2A
- **Technology:** Plannar
H02N65F-VB's high drain-source voltage capability makes it suitable for high voltage environments, and its Plannar technology ensures the stability of MOSFET under high voltage conditions. Its relatively high on-resistance and moderate current carrying capacity make it mainly suitable for low current and high voltage applications.
- **Package:** TO220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1700mΩ @ VGS = 10V
- **Continuous drain current (ID):** 2A
- **Technology:** Plannar
H02N65F-VB's high drain-source voltage capability makes it suitable for high voltage environments, and its Plannar technology ensures the stability of MOSFET under high voltage conditions. Its relatively high on-resistance and moderate current carrying capacity make it mainly suitable for low current and high voltage applications.
Domain and module applications：
Applications and module examples
1. **High voltage switch:**
The H02N65F-VB is ideal for use as a high voltage switch, such as in high voltage DC (HVDC) switch modules. Its 650V drain-source voltage capability enables it to handle high voltage switching operations and is widely used in power conversion and power management systems.
2. **Power conversion:**
In power conversion applications, the H02N65F-VB can be used as a switching element, especially in AC-DC converters and DC-DC converters that require high withstand voltage. Its high voltage handling capability and good thermal management characteristics make it suitable for use in power modules and power converters.
3. **Motor drive:**
Despite its relatively low current carrying capacity, the H02N65F-VB performs well in high voltage motor drive applications. Especially in motor starting and control circuits, where high voltage withstand capability and reliable switching performance are required, this MOSFET ensures stable operation.
4. **Electrical Isolation and Protection:**
H02N65F-VB can also be used in high voltage electrical isolation and protection circuits, such as power protection and overvoltage protection modules. Its high withstand voltage characteristics enable it to effectively isolate and protect other circuit components from high voltage shocks.
By using H02N65F-VB in these applications, designers are able to achieve stable high voltage switch control and power management while ensuring system reliability and safety.
1. **High voltage switch:**
The H02N65F-VB is ideal for use as a high voltage switch, such as in high voltage DC (HVDC) switch modules. Its 650V drain-source voltage capability enables it to handle high voltage switching operations and is widely used in power conversion and power management systems.
2. **Power conversion:**
In power conversion applications, the H02N65F-VB can be used as a switching element, especially in AC-DC converters and DC-DC converters that require high withstand voltage. Its high voltage handling capability and good thermal management characteristics make it suitable for use in power modules and power converters.
3. **Motor drive:**
Despite its relatively low current carrying capacity, the H02N65F-VB performs well in high voltage motor drive applications. Especially in motor starting and control circuits, where high voltage withstand capability and reliable switching performance are required, this MOSFET ensures stable operation.
4. **Electrical Isolation and Protection:**
H02N65F-VB can also be used in high voltage electrical isolation and protection circuits, such as power protection and overvoltage protection modules. Its high withstand voltage characteristics enable it to effectively isolate and protect other circuit components from high voltage shocks.
By using H02N65F-VB in these applications, designers are able to achieve stable high voltage switch control and power management while ensuring system reliability and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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