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H02N60SF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**H02N60SF-VB** is a single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable switching performance. Its on-resistance (RDS(ON)) is 1700mΩ at VGS of 10V, which makes it suitable for high voltage, low current applications. H02N60SF-VB uses Plannar technology, which is designed to provide high voltage stability and reliable performance.
**H02N60SF-VB** is a single N-channel MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable switching performance. Its on-resistance (RDS(ON)) is 1700mΩ at VGS of 10V, which makes it suitable for high voltage, low current applications. H02N60SF-VB uses Plannar technology, which is designed to provide high voltage stability and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
3. Application fields and module examples
**H02N60SF-VB** MOSFET is suitable for the following fields and modules:
1. **Switching power supply**: In high-voltage switching power supplies, such as power adapters and inverters, H02N60SF-VB can be used as the main switching element. Its high voltage withstand capability and reliable switching performance can ensure the stable output and long life of the power supply.
2. **High-voltage protection circuit**: In high-voltage protection circuits, such as current protection and overvoltage protection, H02N60SF-VB can effectively manage the current under high-voltage conditions to prevent overload and short-circuit damage.
3. **Industrial motor drive**: In high-voltage motor drive systems, this MOSFET can withstand high voltages of 650V and provide reliable switching control to ensure efficient operation and reliability of the motor.
4. **Power Regulator**: Among power regulators and high-voltage current regulation modules, the H02N60SF-VB provides stable current control and high-voltage handling capabilities, suitable for various applications requiring high voltage management.
**H02N60SF-VB** MOSFET is suitable for the following fields and modules:
1. **Switching power supply**: In high-voltage switching power supplies, such as power adapters and inverters, H02N60SF-VB can be used as the main switching element. Its high voltage withstand capability and reliable switching performance can ensure the stable output and long life of the power supply.
2. **High-voltage protection circuit**: In high-voltage protection circuits, such as current protection and overvoltage protection, H02N60SF-VB can effectively manage the current under high-voltage conditions to prevent overload and short-circuit damage.
3. **Industrial motor drive**: In high-voltage motor drive systems, this MOSFET can withstand high voltages of 650V and provide reliable switching control to ensure efficient operation and reliability of the motor.
4. **Power Regulator**: Among power regulators and high-voltage current regulation modules, the H02N60SF-VB provides stable current control and high-voltage handling capabilities, suitable for various applications requiring high voltage management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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