中文
English
H02N60F-VB Product details
Back to previous pageProduct introduction：
H02N60F-VB MOSFET Product Introduction
**H02N60F-VB** is a high voltage N-Channel MOSFET in TO220F package. This MOSFET uses Plannar technology and is designed for high voltage, high power applications. Its maximum drain-source voltage is 650V, the gate-source voltage range is ±30V, and the threshold voltage is 3.5V. Its on-resistance (RDS(ON)) is 1700mΩ @ VGS=10V, and the maximum drain current is 2A. H02N60F-VB is suitable for occasions that require high voltage and high power handling, such as switching power supplies and high voltage circuits.
**H02N60F-VB** is a high voltage N-Channel MOSFET in TO220F package. This MOSFET uses Plannar technology and is designed for high voltage, high power applications. Its maximum drain-source voltage is 650V, the gate-source voltage range is ±30V, and the threshold voltage is 3.5V. Its on-resistance (RDS(ON)) is 1700mΩ @ VGS=10V, and the maximum drain current is 2A. H02N60F-VB is suitable for occasions that require high voltage and high power handling, such as switching power supplies and high voltage circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applications and Modules
1. **Switching Power Supply**:
The high withstand voltage characteristics of the H02N60F-VB make it very effective in switching power supplies. It is able to handle switching operations under high voltage conditions and is suitable for power conversion and voltage regulation applications, ensuring the stability and reliability of the power system.
2. **High Voltage DC Circuit**:
Due to its maximum drain-source voltage of 650V, this MOSFET is suitable for use in high voltage DC circuits. It can safely switch current under high voltage environments and is used in high voltage power management and high voltage DC drive systems.
3. **Power Amplifier**:
The H02N60F-VB performs well in power amplifiers, especially in applications that require high voltage. It can be used as a high voltage switch in high power amplifier designs to help optimize power delivery and improve system performance.
4. **Motor Drive**:
In motor drive applications, the high withstand voltage characteristics of this MOSFET allow it to handle motor switching operations under high voltage conditions. It is suitable for motor drive circuits that require high voltage and high power handling capabilities.
1. **Switching Power Supply**:
The high withstand voltage characteristics of the H02N60F-VB make it very effective in switching power supplies. It is able to handle switching operations under high voltage conditions and is suitable for power conversion and voltage regulation applications, ensuring the stability and reliability of the power system.
2. **High Voltage DC Circuit**:
Due to its maximum drain-source voltage of 650V, this MOSFET is suitable for use in high voltage DC circuits. It can safely switch current under high voltage environments and is used in high voltage power management and high voltage DC drive systems.
3. **Power Amplifier**:
The H02N60F-VB performs well in power amplifiers, especially in applications that require high voltage. It can be used as a high voltage switch in high power amplifier designs to help optimize power delivery and improve system performance.
4. **Motor Drive**:
In motor drive applications, the high withstand voltage characteristics of this MOSFET allow it to handle motor switching operations under high voltage conditions. It is suitable for motor drive circuits that require high voltage and high power handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
