中文
English
GTT6301K-VB Product details
Back to previous pageProduct introduction：
1. GTT6301K-VB MOSFET Product Introduction
GTT6301K-VB is a high-performance dual N-channel MOSFET with SOT-23-6 package type. The device uses Trench technology, has low on-resistance and high current handling capability, and is ideal for high-efficiency switching applications and power management. The dual N-channel configuration of GTT6301K-VB allows two independent switching functions in one package, suitable for compact circuit design. Its high switching speed and low on-resistance enable it to perform well in applications that require efficient current control and low power consumption.
GTT6301K-VB is a high-performance dual N-channel MOSFET with SOT-23-6 package type. The device uses Trench technology, has low on-resistance and high current handling capability, and is ideal for high-efficiency switching applications and power management. The dual N-channel configuration of GTT6301K-VB allows two independent switching functions in one package, suitable for compact circuit design. Its high switching speed and low on-resistance enable it to perform well in applications that require efficient current control and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. GTT6301K-VB MOSFET Detailed parameter description
- **Package**: SOT-23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
- **Package**: SOT-23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
III. GTT6301K-VB MOSFET applicable fields and module application examples
1. **Power management module**:
The low on-resistance and high current handling capability of GTT6301K-VB make it very suitable for power management modules such as DC-DC converters and load switches. Its dual N-channel configuration can provide efficient switching control in power supply design, reduce energy loss and heat generation, and improve power conversion efficiency.
2. **Motor drive controller**:
In small motor drive applications, GTT6301K-VB can provide efficient switching control. Its high current capability and low on-resistance enable smooth startup and operation in motor drive circuits, suitable for H-bridge configurations in electronic motor controllers.
3. **Switching power supply**:
The dual N-channel MOSFET configuration of GTT6301K-VB makes it suitable for efficient switching applications in switching power supplies. In high-frequency switching mode, low on-resistance and high switching speed can improve overall power efficiency and reduce power consumption and heat.
4. **Consumer Electronics**:
In smartphones, tablets and other portable electronic devices, the compact package and high efficiency of GTT6301K-VB can effectively reduce the space requirements of power management circuits. Its efficient switching characteristics can optimize battery efficiency and extend device life.
Through its efficient switching performance and compact package, GTT6301K-VB provides reliable current control in a variety of application scenarios, suitable for modern electronic devices that require efficient and low-power solutions.
1. **Power management module**:
The low on-resistance and high current handling capability of GTT6301K-VB make it very suitable for power management modules such as DC-DC converters and load switches. Its dual N-channel configuration can provide efficient switching control in power supply design, reduce energy loss and heat generation, and improve power conversion efficiency.
2. **Motor drive controller**:
In small motor drive applications, GTT6301K-VB can provide efficient switching control. Its high current capability and low on-resistance enable smooth startup and operation in motor drive circuits, suitable for H-bridge configurations in electronic motor controllers.
3. **Switching power supply**:
The dual N-channel MOSFET configuration of GTT6301K-VB makes it suitable for efficient switching applications in switching power supplies. In high-frequency switching mode, low on-resistance and high switching speed can improve overall power efficiency and reduce power consumption and heat.
4. **Consumer Electronics**:
In smartphones, tablets and other portable electronic devices, the compact package and high efficiency of GTT6301K-VB can effectively reduce the space requirements of power management circuits. Its efficient switching characteristics can optimize battery efficiency and extend device life.
Through its efficient switching performance and compact package, GTT6301K-VB provides reliable current control in a variety of application scenarios, suitable for modern electronic devices that require efficient and low-power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
