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GTT3455-VB Product details
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GTT3455-VB MOSFET Product Introduction
**GTT3455-VB** is a high-performance P-channel MOSFET in SOT23-6 package. This MOSFET adopts Trench technology, has low on-resistance and high current carrying capacity, and is very suitable for use in compact and high-efficiency circuit design. GTT3455-VB is designed to meet various load switching needs, especially in applications that require high efficiency and high reliability. It is an important switching component in modern electronic products.
**GTT3455-VB** is a high-performance P-channel MOSFET in SOT23-6 package. This MOSFET adopts Trench technology, has low on-resistance and high current carrying capacity, and is very suitable for use in compact and high-efficiency circuit design. GTT3455-VB is designed to meet various load switching needs, especially in applications that require high efficiency and high reliability. It is an important switching component in modern electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
GTT3455-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage (VDS)**: -30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage (VDS)**: -30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Load switch**: The P-channel design and low on-resistance of GTT3455-VB make it very suitable for use as a load switch. For example, in the load switch circuit of the switching power supply, it can efficiently control the on and off of the power supply, ensure stable current supply, and reduce power loss.
2. **Battery management**: In the battery management system, GTT3455-VB can be used as a battery protection switch to prevent overcharging or over-discharging. Its high current carrying capacity and low on-resistance help optimize the battery life and safety.
3. **Load drive**: This MOSFET is suitable for driving a variety of loads, such as LED lamps or motors. In these applications, it can provide stable switching performance to ensure that the load operates in an efficient and reliable state, especially in situations where high power control is required.
4. **Power inverter**: In a small power inverter or buck-boost converter, GTT3455-VB can be used as a switching element. Its low on-resistance and high current capability help improve the overall system conversion efficiency and are suitable for high-efficiency power supply design.
These applications demonstrate the applicability of the GTT3455-VB MOSFET in various power and load control scenarios, especially in modern electronics that require high efficiency and compact design.
1. **Load switch**: The P-channel design and low on-resistance of GTT3455-VB make it very suitable for use as a load switch. For example, in the load switch circuit of the switching power supply, it can efficiently control the on and off of the power supply, ensure stable current supply, and reduce power loss.
2. **Battery management**: In the battery management system, GTT3455-VB can be used as a battery protection switch to prevent overcharging or over-discharging. Its high current carrying capacity and low on-resistance help optimize the battery life and safety.
3. **Load drive**: This MOSFET is suitable for driving a variety of loads, such as LED lamps or motors. In these applications, it can provide stable switching performance to ensure that the load operates in an efficient and reliable state, especially in situations where high power control is required.
4. **Power inverter**: In a small power inverter or buck-boost converter, GTT3455-VB can be used as a switching element. Its low on-resistance and high current capability help improve the overall system conversion efficiency and are suitable for high-efficiency power supply design.
These applications demonstrate the applicability of the GTT3455-VB MOSFET in various power and load control scenarios, especially in modern electronics that require high efficiency and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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