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GTT2625-VB Product details

Product introduction:

1. Product Introduction

GTT2625-VB is a dual P+P channel MOSFET in SOT23-6 package. The maximum drain-source voltage (VDS) of this device is -20V, and the gate-source voltage range is ±12V. Its gate-source threshold voltage (Vth) is -0.6V, allowing it to be turned on at a lower gate drive voltage. GTT2625-VB uses Trench technology and has a lower on-resistance (RDS(ON)), which is 100mΩ at VGS of 2.5V and 75mΩ at VGS of 4.5V, while being able to handle a maximum drain current (ID) of -4A. This design makes GTT2625-VB ideal for high-efficiency power management and switching applications, especially in negative MOSFET configurations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-P+P
2. Detailed parameter description

- **Package type**: SOT23-6
- **Configuration**: Dual P+P channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 2.5V, 75mΩ @ VGS = 4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to +175°C (please refer to the detailed data sheet for details)

Domain and module applications:

3. Applicable fields and module application examples

The dual P+P channel design and low on-resistance of GTT2625-VB enable it to perform well in a variety of application scenarios. Here are some specific application fields and module examples:

1. **Power management**: In power management modules, GTT2625-VB can be used in the output stage of DC-DC converters to achieve efficient power switching and load regulation. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the system.

2. **Motor control**: In motor drive circuits, GTT2625-VB can be used as a switching component in an H-bridge circuit to accurately control the direction and speed of the motor. Its efficient switching performance can improve the response speed and control accuracy of the motor.

3. **Load switch**: In load switching applications, GTT2625-VB can provide stable switching performance under large load currents. Its low RDS(ON) characteristics ensure small power losses, making it suitable for power switching and protection circuits.

4. **LED driver**: In the LED lamp driver circuit, GTT2625-VB can be used as a load switch to control the switching state and brightness adjustment of the LED. Its low on-resistance can reduce heat generation, thereby extending the service life of the LED.

5. **Automotive electronics**: In automotive electronic systems, such as headlight control, window regulators, etc., GTT2625-VB can provide reliable switching performance and support higher current loads, while its small package is suitable for compact automotive electronic designs.

These applications demonstrate the wide applicability of GTT2625-VB in various fields and its advantages in high efficiency and miniaturization design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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