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GTT2610-VB Product details
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1. GTT2610-VB Product Introduction
GTT2610-VB is a single-N-Channel MOSFET in SOT23-6 package, designed for high-efficiency switching and power management applications. It uses advanced trench technology to provide low on-resistance and high current handling capability. The device has a drain-source voltage (VDS) tolerance of up to 60V, suitable for stable operation in higher voltage environments. The low on-resistance and high current capability of GTT2610-VB make it very suitable for power conversion and switch control circuits that require high efficiency.
GTT2610-VB is a single-N-Channel MOSFET in SOT23-6 package, designed for high-efficiency switching and power management applications. It uses advanced trench technology to provide low on-resistance and high current handling capability. The device has a drain-source voltage (VDS) tolerance of up to 60V, suitable for stable operation in higher voltage environments. The low on-resistance and high current capability of GTT2610-VB make it very suitable for power conversion and switch control circuits that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
2. GTT2610-VB Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
GTT2610-VB MOSFET is suitable for multiple high-efficiency and high-current applications due to its excellent electrical performance and package design.
1. **Power converter**:
In DC-DC converters, GTT2610-VB can be used as a switching MOSFET to achieve efficient current switching and conversion. Its low on-resistance and high drain-source voltage capability make it very suitable for high power density conversion circuits.
2. **Motor drive**:
In motor drive systems, GTT2610-VB can be used as a switching element for the motor, providing stable current control and high efficiency. Its high current handling capability and high voltage resistance make it excel in motor control applications.
3. **Switching power supply (SMPS)**:
In switching power supply applications, GTT2610-VB can be used as a switching element to help achieve efficient power conversion. Its low on-resistance reduces power consumption and improves overall system efficiency.
4. **Load switch control**:
In various load switch applications, such as switching load current and power management systems, GTT2610-VB can achieve reliable switching operation and efficient current delivery.
Through these application areas, GTT2610-VB MOSFET provides excellent performance and reliability for high-efficiency power management and switch control systems.
GTT2610-VB MOSFET is suitable for multiple high-efficiency and high-current applications due to its excellent electrical performance and package design.
1. **Power converter**:
In DC-DC converters, GTT2610-VB can be used as a switching MOSFET to achieve efficient current switching and conversion. Its low on-resistance and high drain-source voltage capability make it very suitable for high power density conversion circuits.
2. **Motor drive**:
In motor drive systems, GTT2610-VB can be used as a switching element for the motor, providing stable current control and high efficiency. Its high current handling capability and high voltage resistance make it excel in motor control applications.
3. **Switching power supply (SMPS)**:
In switching power supply applications, GTT2610-VB can be used as a switching element to help achieve efficient power conversion. Its low on-resistance reduces power consumption and improves overall system efficiency.
4. **Load switch control**:
In various load switch applications, such as switching load current and power management systems, GTT2610-VB can achieve reliable switching operation and efficient current delivery.
Through these application areas, GTT2610-VB MOSFET provides excellent performance and reliability for high-efficiency power management and switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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