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GTT2603-VB Product details
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1. Product Introduction
**GTT2603-VB** is a single P-channel MOSFET in SOT23-6 package, designed with Trench technology. This MOSFET has a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A, suitable for various low-voltage and high-efficiency switching applications. Its on-resistance (RDS(ON)) is 54mΩ at VGS of 4.5V and 49mΩ at VGS of 10V, providing excellent switching performance and low power consumption. The threshold voltage (Vth) of GTT2603-VB is -1.7V, ensuring that it can operate stably at a lower gate-source voltage.
**GTT2603-VB** is a single P-channel MOSFET in SOT23-6 package, designed with Trench technology. This MOSFET has a drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A, suitable for various low-voltage and high-efficiency switching applications. Its on-resistance (RDS(ON)) is 54mΩ at VGS of 4.5V and 49mΩ at VGS of 10V, providing excellent switching performance and low power consumption. The threshold voltage (Vth) of GTT2603-VB is -1.7V, ensuring that it can operate stably at a lower gate-source voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
**GTT2603-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **Low voltage power switch**: In mobile devices and portable electronic products, GTT2603-VB can be used as a low voltage power switch. Its high efficiency and low on-resistance can optimize power management and extend battery life.
2. **Battery protection circuit**: In battery protection modules, this MOSFET can be used for overcurrent and overvoltage protection. Its low RDS(ON) characteristics help reduce energy loss and improve system safety.
3. **Load switch**: Suitable for small motor and load switching applications, such as small home appliances and industrial controllers. Its load switching capability ensures stable current control and equipment reliability.
4. **Power management**: In power management systems, such as power management ICs and battery management systems, GTT2603-VB provides efficient switching functions, suitable for regulating power distribution and improving energy efficiency.
**GTT2603-VB** MOSFET has a wide range of applications in the following fields and modules:
1. **Low voltage power switch**: In mobile devices and portable electronic products, GTT2603-VB can be used as a low voltage power switch. Its high efficiency and low on-resistance can optimize power management and extend battery life.
2. **Battery protection circuit**: In battery protection modules, this MOSFET can be used for overcurrent and overvoltage protection. Its low RDS(ON) characteristics help reduce energy loss and improve system safety.
3. **Load switch**: Suitable for small motor and load switching applications, such as small home appliances and industrial controllers. Its load switching capability ensures stable current control and equipment reliability.
4. **Power management**: In power management systems, such as power management ICs and battery management systems, GTT2603-VB provides efficient switching functions, suitable for regulating power distribution and improving energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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