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GT6301K-VB Product details
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GT6301K-VB MOSFET Product Introduction
GT6301K-VB is a dual N-channel MOSFET using Trench technology in SOT23-6 package. The device provides two sets of N-channel MOSFET devices for applications requiring efficient switching and low on-resistance. Its compact package and low RDS(ON) characteristics make it very suitable for circuit designs with limited space and high efficiency performance.
GT6301K-VB is a dual N-channel MOSFET using Trench technology in SOT23-6 package. The device provides two sets of N-channel MOSFET devices for applications requiring efficient switching and low on-resistance. Its compact package and low RDS(ON) characteristics make it very suitable for circuit designs with limited space and high efficiency performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
GT6301K-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Channel configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology type**: Trench technology
- **Package**: SOT23-6
- **Channel configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology type**: Trench technology
Domain and module applications：
GT6301K-VB MOSFET Applications and Modules
GT6301K-VB MOSFET excels in many applications that require low voltage, efficient switching, and compact packaging. Here are some typical applications and modules:
1. **Power Management**: In power management circuits, the dual N-channel structure of the GT6301K-VB enables it to handle two switching functions at the same time, which is very helpful for achieving compact design and efficient switching. It is suitable for applications such as DC-DC converters, load switches, and power distribution, effectively reducing power consumption and improving power conversion efficiency.
2. **Load Switch**: Due to its low on-resistance and high current handling capability, the GT6301K-VB can be used to switch load currents, especially in space-constrained situations. It is suitable for portable electronic devices, battery-powered systems, and small motor drives.
3. **Portable devices**: The compact package and high efficiency of the GT6301K-VB meet the demand for miniaturization and high efficiency in portable electronics such as smartphones, tablets, and power banks. In these applications, it can serve as a key component for power management and current control.
4. **Consumer electronics**: The GT6301K-VB is also suitable for a variety of switching applications in consumer electronics such as LED drivers, audio devices, and small motor drivers. Its efficient switching characteristics can improve the overall performance and reliability of the product.
Overall, the GT6301K-VB is an efficient, reliable, and adaptable MOSFET that is particularly suitable for use in electronic products that have high requirements for space and power efficiency.
GT6301K-VB MOSFET excels in many applications that require low voltage, efficient switching, and compact packaging. Here are some typical applications and modules:
1. **Power Management**: In power management circuits, the dual N-channel structure of the GT6301K-VB enables it to handle two switching functions at the same time, which is very helpful for achieving compact design and efficient switching. It is suitable for applications such as DC-DC converters, load switches, and power distribution, effectively reducing power consumption and improving power conversion efficiency.
2. **Load Switch**: Due to its low on-resistance and high current handling capability, the GT6301K-VB can be used to switch load currents, especially in space-constrained situations. It is suitable for portable electronic devices, battery-powered systems, and small motor drives.
3. **Portable devices**: The compact package and high efficiency of the GT6301K-VB meet the demand for miniaturization and high efficiency in portable electronics such as smartphones, tablets, and power banks. In these applications, it can serve as a key component for power management and current control.
4. **Consumer electronics**: The GT6301K-VB is also suitable for a variety of switching applications in consumer electronics such as LED drivers, audio devices, and small motor drivers. Its efficient switching characteristics can improve the overall performance and reliability of the product.
Overall, the GT6301K-VB is an efficient, reliable, and adaptable MOSFET that is particularly suitable for use in electronic products that have high requirements for space and power efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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