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GT2625-VB Product details
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GT2625-VB MOSFET Product Introduction
GT2625-VB is a high performance bipolar MOSFET in SOT23-6 package. It is configured as a bipolar channel MOSFET, P channel and N channel, designed for low voltage load switching applications. This MOSFET is manufactured using Trench technology and has low on-resistance and high current carrying capability. GT2625-VB performs well in power management, motor control and other high efficiency switching applications.
GT2625-VB is a high performance bipolar MOSFET in SOT23-6 package. It is configured as a bipolar channel MOSFET, P channel and N channel, designed for low voltage load switching applications. This MOSFET is manufactured using Trench technology and has low on-resistance and high current carrying capability. GT2625-VB performs well in power management, motor control and other high efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Model**: GT2625-VB
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-Source Voltage(V_DS)**: -20V
- **Gate-Source Voltage(V_GS)**: ±12V
- **Threshold Voltage(V_th)**: -0.6V
- **On-Resistance(R_DS(ON))**:
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **Maximum Drain Current(I_D)**: -4A
- **Technology**: Trench
- **Model**: GT2625-VB
- **Package**: SOT23-6
- **Configuration**: Dual-P+P-Channel
- **Drain-Source Voltage(V_DS)**: -20V
- **Gate-Source Voltage(V_GS)**: ±12V
- **Threshold Voltage(V_th)**: -0.6V
- **On-Resistance(R_DS(ON))**:
- 100mΩ @ V_GS = 2.5V
- 75mΩ @ V_GS = 4.5V
- **Maximum Drain Current(I_D)**: -4A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The design features of the GT2625-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power management**: The low on-resistance and high current capability of the GT2625-VB make it ideal for power management applications. For example, in portable electronic devices and computers, it can be used as a power switch to improve power conversion efficiency and reduce power consumption.
2. **Motor drive**: Due to its low R_DS(ON) and high current capability, the GT2625-VB is suitable for motor drives and other motor applications that require precise current control. This MOSFET can provide stable switching performance, which helps to improve the response speed and efficiency of the motor.
3. **Switching circuit**: In various switching circuits, such as switching power supplies and load switches, the GT2625-VB is able to provide efficient switching operations. Its bipolar configuration enables it to be flexibly used in different circuits to achieve efficient current control.
4. **Load protection**: In battery protection circuits and load protection modules, GT2625-VB can be used to implement overcurrent protection and switch control. Its high current capability and low on-resistance help ensure the reliability and performance of the protection circuit.
These features make GT2625-VB an ideal choice for applications that require efficient switching and low power consumption.
The design features of the GT2625-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power management**: The low on-resistance and high current capability of the GT2625-VB make it ideal for power management applications. For example, in portable electronic devices and computers, it can be used as a power switch to improve power conversion efficiency and reduce power consumption.
2. **Motor drive**: Due to its low R_DS(ON) and high current capability, the GT2625-VB is suitable for motor drives and other motor applications that require precise current control. This MOSFET can provide stable switching performance, which helps to improve the response speed and efficiency of the motor.
3. **Switching circuit**: In various switching circuits, such as switching power supplies and load switches, the GT2625-VB is able to provide efficient switching operations. Its bipolar configuration enables it to be flexibly used in different circuits to achieve efficient current control.
4. **Load protection**: In battery protection circuits and load protection modules, GT2625-VB can be used to implement overcurrent protection and switch control. Its high current capability and low on-resistance help ensure the reliability and performance of the protection circuit.
These features make GT2625-VB an ideal choice for applications that require efficient switching and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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