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GT2623-VB Product details
Back to previous pageProduct introduction：
1. GT2623-VB MOSFET Product Introduction
GT2623-VB is a high-performance dual P-channel MOSFET with SOT-23-6 package type. This device uses Trench technology and is designed for low voltage, high switching frequency applications. GT2623-VB provides low on-resistance and high current handling capability, suitable for circuit designs requiring dual-channel MOSFETs, such as switching power supplies, load switches, and low-power circuits. Its small package size makes it suitable for use in space-constrained electronic devices.
GT2623-VB is a high-performance dual P-channel MOSFET with SOT-23-6 package type. This device uses Trench technology and is designed for low voltage, high switching frequency applications. GT2623-VB provides low on-resistance and high current handling capability, suitable for circuit designs requiring dual-channel MOSFETs, such as switching power supplies, load switches, and low-power circuits. Its small package size makes it suitable for use in space-constrained electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
2. GT2623-VB MOSFET Detailed parameter description
- **Package**: SOT-23-6
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = -2.5V
- 75mΩ @ VGS = -4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
- **Package**: SOT-23-6
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = -2.5V
- 75mΩ @ VGS = -4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
Domain and module applications：
3. GT2623-VB MOSFET application fields and module application examples
1. **Switching power supply circuit**:
The dual P-channel configuration and low on-resistance of GT2623-VB make it very suitable for use in switching power supply circuits. Especially in situations where two P-channel MOSFETs are required for efficient switching control, such as synchronous rectification and load switching in power management modules.
2. **Low-power load switch**:
In portable devices and low-power electronic products, GT2623-VB can be used as a load switch, and its compact SOT-23-6 package allows efficient current switching operation in space-constrained designs. Due to its low on-resistance, this MOSFET can reduce power consumption and heat generation, improving the energy efficiency of the device.
3. **Battery protection circuit**:
In battery management systems, GT2623-VB can provide efficient current control and overcurrent protection. Its dual P-channel MOSFET configuration provides bidirectional current switching control, improving the reliability and response speed of battery protection functions.
4. **Small Electronic Devices**:
Due to its small package and efficient switching performance, the GT2623-VB is suitable for a variety of small electronic devices, such as smart home products, mobile devices and other consumer electronics. In these applications, the low power consumption characteristics of the device can significantly extend battery life and optimize overall performance.
These application scenarios of the GT2623-VB demonstrate its wide applicability in low-voltage, high-frequency and space-constrained designs. Its efficient switching characteristics and compact package make it an ideal choice for modern electronic product design.
1. **Switching power supply circuit**:
The dual P-channel configuration and low on-resistance of GT2623-VB make it very suitable for use in switching power supply circuits. Especially in situations where two P-channel MOSFETs are required for efficient switching control, such as synchronous rectification and load switching in power management modules.
2. **Low-power load switch**:
In portable devices and low-power electronic products, GT2623-VB can be used as a load switch, and its compact SOT-23-6 package allows efficient current switching operation in space-constrained designs. Due to its low on-resistance, this MOSFET can reduce power consumption and heat generation, improving the energy efficiency of the device.
3. **Battery protection circuit**:
In battery management systems, GT2623-VB can provide efficient current control and overcurrent protection. Its dual P-channel MOSFET configuration provides bidirectional current switching control, improving the reliability and response speed of battery protection functions.
4. **Small Electronic Devices**:
Due to its small package and efficient switching performance, the GT2623-VB is suitable for a variety of small electronic devices, such as smart home products, mobile devices and other consumer electronics. In these applications, the low power consumption characteristics of the device can significantly extend battery life and optimize overall performance.
These application scenarios of the GT2623-VB demonstrate its wide applicability in low-voltage, high-frequency and space-constrained designs. Its efficient switching characteristics and compact package make it an ideal choice for modern electronic product design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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