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GT2622-VB Product details
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GT2622-VB MOSFET Product Introduction
**GT2622-VB** is a high-performance dual N-channel MOSFET in SOT23-6 package. This MOSFET uses Trench technology, with low on-resistance and good current carrying capacity. It is designed to meet the requirements of power switching devices in compact circuit designs, especially in applications with limited space. GT2622-VB is suitable for occasions requiring high switching speed and stable performance, and is an ideal choice for various portable and low-power electronic devices.
**GT2622-VB** is a high-performance dual N-channel MOSFET in SOT23-6 package. This MOSFET uses Trench technology, with low on-resistance and good current carrying capacity. It is designed to meet the requirements of power switching devices in compact circuit designs, especially in applications with limited space. GT2622-VB is suitable for occasions requiring high switching speed and stable performance, and is an ideal choice for various portable and low-power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | 1800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
GT2622-VB MOSFET detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Drain to Source Voltage (VDS)**: 60V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3000mΩ @ VGS = 4.5V
- 1800mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 0.35A
- **Technology**: Trench technology
- **Package**: SOT23-6
- **Configuration**: Dual-N+N-Channel
- **Drain to Source Voltage (VDS)**: 60V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3000mΩ @ VGS = 4.5V
- 1800mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 0.35A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
1. **Portable devices**: The compact SOT23-6 package and low power consumption of the GT2622-VB make it ideal for power switching in portable devices. For example, in power management modules for smartphones, tablets, and other mobile devices, it can be used as a high-efficiency switching device to optimize battery life and reduce size.
2. **Low-power power management**: In low-power power management applications, such as battery-powered electronic devices, the GT2622-VB is able to provide the necessary power switching functions while maintaining low power consumption and high efficiency. This is especially important for devices that need to extend battery life.
3. **Power converter**: This MOSFET can be used as a switching device in a DC-DC converter. For example, in a low-power buck converter, it can achieve high-efficiency conversion and is suitable for applications that require precise voltage regulation, such as microcontrollers and sensor power modules.
4. **Small appliances**: The low on-resistance and compact package of GT2622-VB also make it suitable for switch control in small appliances. For example, in the drive circuit of LED lamps or small fans, it can be used as an effective switching element, providing stable performance and reliable switching operation.
These applications demonstrate the wide applicability of GT2622-VB MOSFET in small, low-power and portable electronic devices. Its high efficiency and compact design make it an indispensable component in many modern electronic products.
1. **Portable devices**: The compact SOT23-6 package and low power consumption of the GT2622-VB make it ideal for power switching in portable devices. For example, in power management modules for smartphones, tablets, and other mobile devices, it can be used as a high-efficiency switching device to optimize battery life and reduce size.
2. **Low-power power management**: In low-power power management applications, such as battery-powered electronic devices, the GT2622-VB is able to provide the necessary power switching functions while maintaining low power consumption and high efficiency. This is especially important for devices that need to extend battery life.
3. **Power converter**: This MOSFET can be used as a switching device in a DC-DC converter. For example, in a low-power buck converter, it can achieve high-efficiency conversion and is suitable for applications that require precise voltage regulation, such as microcontrollers and sensor power modules.
4. **Small appliances**: The low on-resistance and compact package of GT2622-VB also make it suitable for switch control in small appliances. For example, in the drive circuit of LED lamps or small fans, it can be used as an effective switching element, providing stable performance and reliable switching operation.
These applications demonstrate the wide applicability of GT2622-VB MOSFET in small, low-power and portable electronic devices. Its high efficiency and compact design make it an indispensable component in many modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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