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GT2603-VB Product details
Back to previous pageProduct introduction：
1. GT2603-VB Product Introduction
GT2603-VB is a single-P-Channel MOSFET in SOT23-6 package. It is designed with advanced trench technology, has low on-resistance and high current handling capability, and is suitable for various high-efficiency switching applications. The device has a high negative drain-source voltage (VDS), up to -30V, which enables it to work stably in a negative voltage environment. GT2603-VB is suitable for low-power and high-efficiency electronic circuit design, providing excellent current switching and control performance.
GT2603-VB is a single-P-Channel MOSFET in SOT23-6 package. It is designed with advanced trench technology, has low on-resistance and high current handling capability, and is suitable for various high-efficiency switching applications. The device has a high negative drain-source voltage (VDS), up to -30V, which enables it to work stably in a negative voltage environment. GT2603-VB is suitable for low-power and high-efficiency electronic circuit design, providing excellent current switching and control performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. GT2603-VB Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
GT2603-VB MOSFET has a wide range of applications, especially in scenarios that require negative voltage and efficient switching control.
1. **Negative voltage power management**:
In negative voltage power converters and regulators, GT2603-VB can be used as a switching element to achieve efficient current switching and voltage regulation. Its negative drain-source voltage capability makes it suitable for power management circuits in negative voltage environments.
2. **DC-DC converter**:
In low voltage DC-DC converters, GT2603-VB can be used as a switching MOSFET, providing low on-resistance to reduce energy loss. Its compact SOT23-6 package is suitable for applications with limited space.
3. **Battery protection circuit**:
In battery protection modules, GT2603-VB can be used to protect batteries from overcurrent or overdischarge. Its high current handling capability and negative voltage characteristics make it suitable for use in battery management systems.
4. **Load Switch Control**:
In various load switch applications, the GT2603-VB is suitable for switching load currents, achieving efficient current control and switching functions. Its low on-resistance characteristics help improve overall system efficiency.
Through these applications, the GT2603-VB MOSFET provides reliable performance and efficient current control, suitable for use in power management and load switching systems in a variety of modern electronic devices.
GT2603-VB MOSFET has a wide range of applications, especially in scenarios that require negative voltage and efficient switching control.
1. **Negative voltage power management**:
In negative voltage power converters and regulators, GT2603-VB can be used as a switching element to achieve efficient current switching and voltage regulation. Its negative drain-source voltage capability makes it suitable for power management circuits in negative voltage environments.
2. **DC-DC converter**:
In low voltage DC-DC converters, GT2603-VB can be used as a switching MOSFET, providing low on-resistance to reduce energy loss. Its compact SOT23-6 package is suitable for applications with limited space.
3. **Battery protection circuit**:
In battery protection modules, GT2603-VB can be used to protect batteries from overcurrent or overdischarge. Its high current handling capability and negative voltage characteristics make it suitable for use in battery management systems.
4. **Load Switch Control**:
In various load switch applications, the GT2603-VB is suitable for switching load currents, achieving efficient current control and switching functions. Its low on-resistance characteristics help improve overall system efficiency.
Through these applications, the GT2603-VB MOSFET provides reliable performance and efficient current control, suitable for use in power management and load switching systems in a variety of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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