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GL2310-VB Product details
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GL2310-VB MOSFET Product Introduction
GL2310-VB is a single N-channel MOSFET using Trench technology, packaged in SOT223. This MOSFET is designed to provide reliable high-efficiency switching and low-resistance conduction performance, and is particularly suitable for use in applications with medium voltage and current requirements. Its low on-resistance and high current handling capability make it excel in many power management and switching applications.
GL2310-VB is a single N-channel MOSFET using Trench technology, packaged in SOT223. This MOSFET is designed to provide reliable high-efficiency switching and low-resistance conduction performance, and is particularly suitable for use in applications with medium voltage and current requirements. Its low on-resistance and high current handling capability make it excel in many power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
GL2310-VB MOSFET Detailed parameter description
- **Package**: SOT223
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench technology
- **Package**: SOT223
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and modules of GL2310-VB MOSFET
GL2310-VB MOSFET is suitable for a variety of low and medium voltage applications, especially in scenarios that require high switching efficiency and reliability. Here are some typical application fields and modules:
1. **Power management**: GL2310-VB is able to handle power switching operations efficiently, especially in low-voltage power converters. Due to its relatively low RDS(ON) and the maximum current it can withstand, it is suitable for DC-DC converters, load switches and power management circuits, which can effectively reduce power losses and improve system efficiency.
2. **Battery-powered devices**: In battery-powered devices, GL2310-VB is suitable as a switching MOSFET to control the switching of the battery, provide over-current protection, and effectively manage the battery. This helps to extend battery life and ensure safe operation of the battery.
3. **LED drive circuit**: GL2310-VB can be used as a switching element in LED drive circuits. Its low on-resistance and high current handling capability enable it to effectively control current and improve system reliability when driving high-power LEDs or LED lighting modules.
Overall, the GL2310-VB is a versatile and stable MOSFET suitable for a variety of circuits requiring medium voltage and current handling.
GL2310-VB MOSFET is suitable for a variety of low and medium voltage applications, especially in scenarios that require high switching efficiency and reliability. Here are some typical application fields and modules:
1. **Power management**: GL2310-VB is able to handle power switching operations efficiently, especially in low-voltage power converters. Due to its relatively low RDS(ON) and the maximum current it can withstand, it is suitable for DC-DC converters, load switches and power management circuits, which can effectively reduce power losses and improve system efficiency.
2. **Battery-powered devices**: In battery-powered devices, GL2310-VB is suitable as a switching MOSFET to control the switching of the battery, provide over-current protection, and effectively manage the battery. This helps to extend battery life and ensure safe operation of the battery.
3. **LED drive circuit**: GL2310-VB can be used as a switching element in LED drive circuits. Its low on-resistance and high current handling capability enable it to effectively control current and improve system reliability when driving high-power LEDs or LED lighting modules.
Overall, the GL2310-VB is a versatile and stable MOSFET suitable for a variety of circuits requiring medium voltage and current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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