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GJ9973-VB Product details
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GJ9973-VB MOSFET Product Introduction
**GJ9973-VB** is a high-performance N-Channel MOSFET with a TO252 package type. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage of 60V, a gate-source voltage range of ±20V, and a threshold voltage of 1.7V. Its on-resistance is low, 85mΩ @ VGS=4.5V and 73mΩ @ VGS=10V, and the maximum drain current is 18A. These characteristics make GJ9973-VB excel in high-efficiency switching circuits and power conversion applications.
**GJ9973-VB** is a high-performance N-Channel MOSFET with a TO252 package type. It uses Trench technology to provide low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage of 60V, a gate-source voltage range of ±20V, and a threshold voltage of 1.7V. Its on-resistance is low, 85mΩ @ VGS=4.5V and 73mΩ @ VGS=10V, and the maximum drain current is 18A. These characteristics make GJ9973-VB excel in high-efficiency switching circuits and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Switch**:
The low on-resistance and high current handling capability of the GJ9973-VB make it very effective in power switching applications. Especially in DC-DC converters, this MOSFET can significantly reduce switching losses, thereby improving the efficiency and stability of the power supply.
2. **Power Amplifier**:
In power amplifier designs, the GJ9973-VB can act as an efficient switching element to handle large current loads. This makes it excel in audio amplifiers and RF amplifiers, improving system performance and reliability.
3. **Motor Drive**:
Due to its high current carrying capability, this MOSFET is suitable for motor drive applications. It can efficiently control the starting, stopping and speed regulation of the motor, providing stable operating performance in various electric drive systems.
4. **High power LED driver**:
In high power LED driver applications, GJ9973-VB can provide efficient switch control to ensure stable LED operation and optimize energy efficiency. It is suitable for LED driver circuits that require high switching frequency and low on-resistance.
1. **Power Switch**:
The low on-resistance and high current handling capability of the GJ9973-VB make it very effective in power switching applications. Especially in DC-DC converters, this MOSFET can significantly reduce switching losses, thereby improving the efficiency and stability of the power supply.
2. **Power Amplifier**:
In power amplifier designs, the GJ9973-VB can act as an efficient switching element to handle large current loads. This makes it excel in audio amplifiers and RF amplifiers, improving system performance and reliability.
3. **Motor Drive**:
Due to its high current carrying capability, this MOSFET is suitable for motor drive applications. It can efficiently control the starting, stopping and speed regulation of the motor, providing stable operating performance in various electric drive systems.
4. **High power LED driver**:
In high power LED driver applications, GJ9973-VB can provide efficient switch control to ensure stable LED operation and optimize energy efficiency. It is suitable for LED driver circuits that require high switching frequency and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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