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GJ85L02H-VB Product details
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GJ85L02H-VB MOSFET Product Introduction
GJ85L02H-VB is a high-performance single N-channel MOSFET in TO252 package with excellent conduction capability and low on-resistance. This MOSFET is designed for low voltage and high current applications and can maintain low power consumption under high current load. Its Trench technology ensures excellent switching characteristics and high efficiency.
GJ85L02H-VB is a high-performance single N-channel MOSFET in TO252 package with excellent conduction capability and low on-resistance. This MOSFET is designed for low voltage and high current applications and can maintain low power consumption under high current load. Its Trench technology ensures excellent switching characteristics and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: GJ85L02H-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 30V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 1.7V
- **On-Resistance(R_DS(ON))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 100A
- **Technology**: Trench
- **Model**: GJ85L02H-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 30V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 1.7V
- **On-Resistance(R_DS(ON))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The characteristics of the GJ85L02H-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power management**: Due to its extremely low on-resistance and high current carrying capability, the GJ85L02H-VB is ideal for applications such as power switch modules, power management ICs, and DC-DC converters. In these applications, MOSFETs can efficiently control the flow of current and minimize power consumption and heat generation.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicles and hybrid electric vehicles, the GJ85L02H-VB can be used in battery management systems and motor drive systems. The high current capability and low on-resistance of this MOSFET help improve the energy efficiency and performance of the system and reduce the overall energy consumption of electric vehicles.
3. **High Power Switch**: Due to its high drain current capability and low on-resistance, the GJ85L02H-VB is suitable for high power switching applications such as high power amplifiers and motor controllers. These applications require MOSFETs that can stably withstand large currents and provide efficient switching performance.
4. **Industrial Automation**: In industrial automation equipment, such as servo motor drives and robot control systems, the GJ85L02H-VB is able to provide stable switching performance and reliable current control, ensuring efficient operation and reliability of the system.
These features make the GJ85L02H-VB an ideal choice for a variety of applications requiring high current and low power consumption.
The characteristics of the GJ85L02H-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power management**: Due to its extremely low on-resistance and high current carrying capability, the GJ85L02H-VB is ideal for applications such as power switch modules, power management ICs, and DC-DC converters. In these applications, MOSFETs can efficiently control the flow of current and minimize power consumption and heat generation.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicles and hybrid electric vehicles, the GJ85L02H-VB can be used in battery management systems and motor drive systems. The high current capability and low on-resistance of this MOSFET help improve the energy efficiency and performance of the system and reduce the overall energy consumption of electric vehicles.
3. **High Power Switch**: Due to its high drain current capability and low on-resistance, the GJ85L02H-VB is suitable for high power switching applications such as high power amplifiers and motor controllers. These applications require MOSFETs that can stably withstand large currents and provide efficient switching performance.
4. **Industrial Automation**: In industrial automation equipment, such as servo motor drives and robot control systems, the GJ85L02H-VB is able to provide stable switching performance and reliable current control, ensuring efficient operation and reliability of the system.
These features make the GJ85L02H-VB an ideal choice for a variety of applications requiring high current and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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