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GJ55N03-VB Product details
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GJ55N03-VB MOSFET Product Introduction
**GJ55N03-VB** is a high-performance N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology, has excellent conductivity and low on-resistance, and is particularly suitable for use in high-power and high-efficiency applications. Its main features include high current carrying capacity and low on-resistance, which can meet the needs of various power conversion and switching applications.
**GJ55N03-VB** is a high-performance N-channel MOSFET in TO252 package. This MOSFET adopts advanced Trench technology, has excellent conductivity and low on-resistance, and is particularly suitable for use in high-power and high-efficiency applications. Its main features include high current carrying capacity and low on-resistance, which can meet the needs of various power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
GJ55N03-VB MOSFET detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**: The low on-resistance and high current carrying capacity of GJ55N03-VB make it very suitable for use in power management modules. For example, in a switching power supply (SMPS), this MOSFET can be used as the main switching device to improve power conversion efficiency and reduce power loss.
2. **Motor drive**: In motor drive applications, such as the control circuit of a brushless DC motor (BLDC), GJ55N03-VB can provide high current carrying capacity and low on-resistance to ensure efficient and stable motor drive, especially in situations where fast switching and high power output are required.
3. **DC-DC converter**: Due to its low RDS(ON) and high current capability, GJ55N03-VB is also very suitable for use in DC-DC converters. In these applications, it can act as a synchronous rectifier to help improve conversion efficiency and reduce overall power consumption.
4. **Power Switch**: In various power switching applications, such as battery-powered devices and high-power power systems, the GJ55N03-VB is able to provide reliable switching performance and, due to its low on-resistance, can significantly reduce heat loss and improve the overall efficiency of the system.
These application areas demonstrate the wide applicability of the GJ55N03-VB MOSFET, especially in power and power management systems that require high efficiency and high reliability.
1. **Power management**: The low on-resistance and high current carrying capacity of GJ55N03-VB make it very suitable for use in power management modules. For example, in a switching power supply (SMPS), this MOSFET can be used as the main switching device to improve power conversion efficiency and reduce power loss.
2. **Motor drive**: In motor drive applications, such as the control circuit of a brushless DC motor (BLDC), GJ55N03-VB can provide high current carrying capacity and low on-resistance to ensure efficient and stable motor drive, especially in situations where fast switching and high power output are required.
3. **DC-DC converter**: Due to its low RDS(ON) and high current capability, GJ55N03-VB is also very suitable for use in DC-DC converters. In these applications, it can act as a synchronous rectifier to help improve conversion efficiency and reduce overall power consumption.
4. **Power Switch**: In various power switching applications, such as battery-powered devices and high-power power systems, the GJ55N03-VB is able to provide reliable switching performance and, due to its low on-resistance, can significantly reduce heat loss and improve the overall efficiency of the system.
These application areas demonstrate the wide applicability of the GJ55N03-VB MOSFET, especially in power and power management systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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