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GJ35N03-VB Product details
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1. Product Introduction
GJ35N03-VB is a single N-channel MOSFET in TO252 package. The main features of this device include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 1.7V gate-source threshold voltage (Vth). It uses advanced Trench technology and has a low on-resistance (RDS(ON)). The on-resistance is 6mΩ when VGS is 4.5V and 5mΩ when VGS is 10V, and it can carry a maximum drain current (ID) of 80A. This performance makes GJ35N03-VB an ideal choice for switching applications that require high efficiency and high reliability.
GJ35N03-VB is a single N-channel MOSFET in TO252 package. The main features of this device include 30V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 1.7V gate-source threshold voltage (Vth). It uses advanced Trench technology and has a low on-resistance (RDS(ON)). The on-resistance is 6mΩ when VGS is 4.5V and 5mΩ when VGS is 10V, and it can carry a maximum drain current (ID) of 80A. This performance makes GJ35N03-VB an ideal choice for switching applications that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to +175°C (please refer to the detailed data sheet for details)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to +175°C (please refer to the detailed data sheet for details)
Domain and module applications：
3. Applicable fields and module application examples
GJ35N03-VB MOSFET performs well in various power management and switching applications, especially for high-efficiency and high-frequency application scenarios. The following are some specific application fields and module examples:
1. **Automotive electronics**: This MOSFET is often used in power management systems in automobiles, such as electric power steering systems (EPS), electric pumps, fan control modules, etc. These applications require high reliability and low loss switching devices.
2. **DC-DC converter**: In DC-DC converters, GJ35N03-VB can be used in synchronous rectifiers and switch parts, using its low on-resistance and high current capability to improve conversion efficiency and reduce heat.
3. **Motor drive**: Suitable for the output stage of motor drives. Such applications require MOSFETs with fast switching and high power handling capabilities. The characteristics of GJ35N03-VB can well meet these needs.
4. **Consumer electronics**: In the battery management systems of laptops, mobile phones and other portable devices, GJ35N03-VB can be used as a power switch to ensure stable operation of the device in different power modes.
5. **Industrial power**: Used in power modules for industrial equipment, these modules usually require components with high efficiency and durability. The high current handling capability of GJ35N03-VB makes it suitable for this environment.
These applications demonstrate the wide applicability of GJ35N03-VB in different fields and its excellent performance in scenarios requiring high efficiency and high reliability.
GJ35N03-VB MOSFET performs well in various power management and switching applications, especially for high-efficiency and high-frequency application scenarios. The following are some specific application fields and module examples:
1. **Automotive electronics**: This MOSFET is often used in power management systems in automobiles, such as electric power steering systems (EPS), electric pumps, fan control modules, etc. These applications require high reliability and low loss switching devices.
2. **DC-DC converter**: In DC-DC converters, GJ35N03-VB can be used in synchronous rectifiers and switch parts, using its low on-resistance and high current capability to improve conversion efficiency and reduce heat.
3. **Motor drive**: Suitable for the output stage of motor drives. Such applications require MOSFETs with fast switching and high power handling capabilities. The characteristics of GJ35N03-VB can well meet these needs.
4. **Consumer electronics**: In the battery management systems of laptops, mobile phones and other portable devices, GJ35N03-VB can be used as a power switch to ensure stable operation of the device in different power modes.
5. **Industrial power**: Used in power modules for industrial equipment, these modules usually require components with high efficiency and durability. The high current handling capability of GJ35N03-VB makes it suitable for this environment.
These applications demonstrate the wide applicability of GJ35N03-VB in different fields and its excellent performance in scenarios requiring high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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