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GFB70N03-VB Product details
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GFB70N03-VB MOSFET Product Introduction
GFB70N03-VB is a high performance N-channel MOSFET designed for power management applications. This MOSFET is packaged in TO263 and strikes a good balance between high efficiency and low on-resistance, making it ideal for a wide range of demanding applications. It uses advanced Trench technology to ensure low gate charge and low on-resistance, thereby improving overall system efficiency.
GFB70N03-VB is a high performance N-channel MOSFET designed for power management applications. This MOSFET is packaged in TO263 and strikes a good balance between high efficiency and low on-resistance, making it ideal for a wide range of demanding applications. It uses advanced Trench technology to ensure low gate charge and low on-resistance, thereby improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Continuous drain current (ID):** 98A
- **Technology:** Trench
The low on-resistance and high drain current capability of the GFB70N03-VB MOSFET are optimized for high-efficiency power conversion systems to ensure minimal power loss under high current loads.
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Continuous drain current (ID):** 98A
- **Technology:** Trench
The low on-resistance and high drain current capability of the GFB70N03-VB MOSFET are optimized for high-efficiency power conversion systems to ensure minimal power loss under high current loads.
Domain and module applications：
Applications and Module Examples
1. **Power Supply Units (PSUs):**
GFB70N03-VB is ideal for use in power supply units, especially where efficiency and thermal management are critical. Its low RDS(ON) minimizes conduction losses, making it suitable for applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
2. **DC-DC Converters:**
In DC-DC converter modules, especially step-down converters, GFB70N03-VB is able to handle high currents while maintaining low losses. Its Trench technology enables efficient switching, contributing to the design of compact and high-performance converters used in telecommunications and data centers.
3. **Motor Control:**
GFB70N03-VB's high current capacity and low on-resistance make it suitable for motor control applications such as industrial automation and electric vehicles. It is able to drive motors efficiently with minimal heat generation, thereby improving the reliability and life of the control system.
4. **Battery Management System (BMS):**
GFB70N03-VB can be used in battery management systems for electric vehicles or energy storage systems to ensure efficient operation and reduce energy loss during charging and switching. Its stable performance under different loads makes it ideal for managing high-power battery packs.
By integrating GFB70N03-VB into these applications, designers can achieve excellent performance and reduce energy consumption, ensuring that the final product meets the demanding requirements of modern electronic systems.
1. **Power Supply Units (PSUs):**
GFB70N03-VB is ideal for use in power supply units, especially where efficiency and thermal management are critical. Its low RDS(ON) minimizes conduction losses, making it suitable for applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
2. **DC-DC Converters:**
In DC-DC converter modules, especially step-down converters, GFB70N03-VB is able to handle high currents while maintaining low losses. Its Trench technology enables efficient switching, contributing to the design of compact and high-performance converters used in telecommunications and data centers.
3. **Motor Control:**
GFB70N03-VB's high current capacity and low on-resistance make it suitable for motor control applications such as industrial automation and electric vehicles. It is able to drive motors efficiently with minimal heat generation, thereby improving the reliability and life of the control system.
4. **Battery Management System (BMS):**
GFB70N03-VB can be used in battery management systems for electric vehicles or energy storage systems to ensure efficient operation and reduce energy loss during charging and switching. Its stable performance under different loads makes it ideal for managing high-power battery packs.
By integrating GFB70N03-VB into these applications, designers can achieve excellent performance and reduce energy consumption, ensuring that the final product meets the demanding requirements of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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