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GE4435A-VB Product details

Product introduction:

1. GE4435A-VB Product Introduction

GE4435A-VB is a single-channel P-channel MOSFET in SOP8 package, designed for applications requiring low voltage and high efficiency conversion. The device has a maximum drain-source voltage of -30V and a maximum continuous drain current of -9A. It has an extremely low on-resistance, ensuring efficient power transmission and low power consumption. It uses advanced Trench technology to further optimize the conduction performance, making it perform well in switching circuits, load switches, and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -9A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
II. GE4435A-VB Detailed parameter description

1. **Package type**: SOP8
2. **Configuration**: Single P-Channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
7. **Drain current (ID)**: -9A
8. **Technology**: Trench
9. **Features**: Low on-resistance, high performance, suitable for low-voltage application scenarios.

Domain and module applications:

III. GE4435A-VB Application Fields and Module Examples

GE4435A-VB MOSFET is suitable for the following fields and modules due to its excellent electrical performance and low on-resistance:

1. **Load switch application**: GE4435A-VB is very suitable for use in load switches, especially in power control modules. Its low on-resistance ensures low power consumption during switching operations, making it superior in portable devices and battery-powered systems, extending the battery life of the device.

2. **DC-DC converter**: This MOSFET is also widely used in DC-DC converters, especially in low-drop synchronous rectifiers. Its low on-resistance and high current carrying capacity can improve conversion efficiency and reduce power loss, making it suitable for power modules in consumer electronic products such as mobile phones and tablets.

3. **Power management system**: In the power management system, GE4435A-VB can be used to control the power path and manage power distribution. Its excellent switching performance helps optimize the power efficiency of the system, and is particularly suitable for scenarios that require high performance and reliability, such as servers, power adapters, etc.

4. **Reverse current protection**: In some applications that need to prevent reverse current, such as solar charging controllers and portable power systems, GE4435A-VB can effectively prevent current backflow, protect circuit safety, and ensure stable operation of the system.

With its excellent low-voltage performance and high efficiency, GE4435A-VB MOSFET is very suitable for applications that require low power consumption and high efficiency, providing reliable power control and management solutions for various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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