G06N60-VB Product details
Product introduction:
G06N60-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications. It supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and is equipped with SJ_Multi-EPI technology to achieve good switching performance and voltage resistance. The threshold voltage (Vth) is 3.5V, and when VGS=10V, its on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. These characteristics enable G06N60-VB to provide stable performance in high voltage environments, and is suitable for power conversion, high voltage switching and other circuits requiring high voltage resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
G06N60-VB MOSFET performs well in high voltage applications, and its main application fields include:
1. **Power converter**:
- In high voltage power converters, such as inverters and power factor correction (PFC) circuits, the high drain-source voltage (VDS) capability and good switching performance of G06N60-VB enable it to effectively handle the switching requirements during high voltage conversion, thereby improving power efficiency and stability.
2. **High voltage switching applications**:
- Due to its high drain-source voltage capability of 650V, G06N60-VB is particularly suitable for high voltage switching applications, such as high voltage DC switching and power switching. It can reliably handle high voltage signals and ensure the safety and stability of switching operations.
3. **Power Electronics**:
- In power electronics such as motor drives, power conditioners, and battery management systems, the G06N60-VB provides the required high voltage tolerance and reliability to handle power conversion and control in high voltage environments.
4. **Home Appliances and Industrial Equipment**:
- In home appliances and industrial equipment such as high voltage heaters, light regulators, and industrial power supplies, the high voltage capability of the G06N60-VB ensures safe operation and efficient performance of the equipment, and is suitable for a variety of application scenarios that require high voltage handling.
5. **LED Driver**:
- In high power LED drivers, the G06N60-VB is able to handle high voltage inputs and provide stable current outputs to ensure efficient and reliable operation of LED lamps.
6. **Solar Inverter**:
- High voltage conversion and regulation in solar inverters require reliable high voltage MOSFETs. G06N60-VB is suitable for such applications, which can efficiently process the high voltage signals generated by solar panels and optimize energy conversion efficiency.
Through these application scenarios, G06N60-VB MOSFET demonstrates its excellent performance in high voltage and high power environments, and can meet various circuit design requirements requiring high voltage resistance and stability.
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