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FZ44RS-VB Product details
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Product Introduction: FZ44RS-VB
FZ44RS-VB is a high-performance N-channel MOSFET in TO263 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, supporting a drain current (ID) of up to 50A. Using Trench technology, FZ44RS-VB provides low on-resistance (RDS(ON)) to improve switching efficiency. Specifically, at VGS=4.5V, the on-resistance is 35mΩ, and at VGS=10V, the on-resistance is 32mΩ. Its lower threshold voltage (Vth) of 1.7V enables it to conduct efficiently at lower gate voltages. This MOSFET is suitable for a variety of power switching and control applications, and can effectively manage current and improve the overall efficiency of the system.
FZ44RS-VB is a high-performance N-channel MOSFET in TO263 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, supporting a drain current (ID) of up to 50A. Using Trench technology, FZ44RS-VB provides low on-resistance (RDS(ON)) to improve switching efficiency. Specifically, at VGS=4.5V, the on-resistance is 35mΩ, and at VGS=10V, the on-resistance is 32mΩ. Its lower threshold voltage (Vth) of 1.7V enables it to conduct efficiently at lower gate voltages. This MOSFET is suitable for a variety of power switching and control applications, and can effectively manage current and improve the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package design provides good heat dissipation and mechanical stability, suitable for high power and high current applications.
2. **Configuration**: Single N-channel
- As a single N-channel MOSFET, the FZ44RS-VB provides efficient switching and amplification functions in the circuit, suitable for power switching applications.
3. **Drain-source voltage (VDS)**: 60V
- The MOSFET supports a maximum drain-source voltage of 60V, making it suitable for medium voltage power control applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wide range of gate-source voltages, providing flexible control options to meet different circuit design requirements.
5. **Threshold Voltage (Vth)**: 1.7V
- The lower threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate-source voltage, providing good switching performance.
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- Low on-resistance helps reduce switching losses and improve overall energy efficiency.
7. **Drain Current (ID)**: 50A
- Supports drain currents up to 50A, suitable for high current power switching applications.
8. **Technology**: Trench
- Trench technology optimizes the switching performance and on-resistance of the MOSFET, improving overall efficiency and reliability.
1. **Package**: TO263
- The TO263 package design provides good heat dissipation and mechanical stability, suitable for high power and high current applications.
2. **Configuration**: Single N-channel
- As a single N-channel MOSFET, the FZ44RS-VB provides efficient switching and amplification functions in the circuit, suitable for power switching applications.
3. **Drain-source voltage (VDS)**: 60V
- The MOSFET supports a maximum drain-source voltage of 60V, making it suitable for medium voltage power control applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wide range of gate-source voltages, providing flexible control options to meet different circuit design requirements.
5. **Threshold Voltage (Vth)**: 1.7V
- The lower threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate-source voltage, providing good switching performance.
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- Low on-resistance helps reduce switching losses and improve overall energy efficiency.
7. **Drain Current (ID)**: 50A
- Supports drain currents up to 50A, suitable for high current power switching applications.
8. **Technology**: Trench
- Trench technology optimizes the switching performance and on-resistance of the MOSFET, improving overall efficiency and reliability.
Domain and module applications：
Applications and modules
1. **Power Management**:
FZ44RS-VB is ideal for power management systems. Its low on-resistance and high current handling capability enable it to effectively control energy transfer and improve power efficiency in DC-DC converters.
2. **Motor Drive**:
In motor drive applications, FZ44RS-VB can be used as a switching element for high-power motors. Its high drain current and low on-resistance ensure stability and efficiency of motor drives.
3. **Automotive Electronics**:
FZ44RS-VB is suitable for power switching and load control in automotive electronics, such as power seats, lights and window controls. Its excellent heat dissipation and current handling capability ensure reliable operation in automotive environments.
4. **Industrial Automation**:
In industrial automation systems, FZ44RS-VB can be used to control relays, motors and other high-power loads. Its high current handling capability and low on-resistance help improve the overall efficiency and reliability of the system.
5. **Battery Management System**:
FZ44RS-VB can be used in battery management systems for efficient power switching. Its low on-resistance helps reduce energy loss and improve the overall performance of the battery system.
FZ44RS-VB is a high-efficiency N-channel MOSFET suitable for a variety of high-power and high-efficiency applications. Its TO263 package and Trench technology ensure excellent switching performance and reliability, making it have a wide range of application potential in power management, motor drive and industrial automation.
1. **Power Management**:
FZ44RS-VB is ideal for power management systems. Its low on-resistance and high current handling capability enable it to effectively control energy transfer and improve power efficiency in DC-DC converters.
2. **Motor Drive**:
In motor drive applications, FZ44RS-VB can be used as a switching element for high-power motors. Its high drain current and low on-resistance ensure stability and efficiency of motor drives.
3. **Automotive Electronics**:
FZ44RS-VB is suitable for power switching and load control in automotive electronics, such as power seats, lights and window controls. Its excellent heat dissipation and current handling capability ensure reliable operation in automotive environments.
4. **Industrial Automation**:
In industrial automation systems, FZ44RS-VB can be used to control relays, motors and other high-power loads. Its high current handling capability and low on-resistance help improve the overall efficiency and reliability of the system.
5. **Battery Management System**:
FZ44RS-VB can be used in battery management systems for efficient power switching. Its low on-resistance helps reduce energy loss and improve the overall performance of the battery system.
FZ44RS-VB is a high-efficiency N-channel MOSFET suitable for a variety of high-power and high-efficiency applications. Its TO263 package and Trench technology ensure excellent switching performance and reliability, making it have a wide range of application potential in power management, motor drive and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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