中文
English
FX6ASJ-3-VB Product details
Back to previous pageProduct introduction：
Product Introduction: FX6ASJ-3-VB
FX6ASJ-3-VB is a single P-channel MOSFET in TO252 package. This MOSFET is designed to handle high voltage and high current loads, and is suitable for applications requiring high withstand voltage and low on-resistance. Its maximum drain-source voltage (VDS) can reach -150V, and the gate-source voltage (VGS) is ±20V, providing stable switching and control capabilities. The threshold voltage (Vth) of FX6ASJ-3-VB is -2V, the on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and the drain current (ID) supports up to -15A. Using Trench technology, this MOSFET provides excellent switching performance and efficient power management capabilities, and is suitable for a variety of high voltage control and switching applications.
FX6ASJ-3-VB is a single P-channel MOSFET in TO252 package. This MOSFET is designed to handle high voltage and high current loads, and is suitable for applications requiring high withstand voltage and low on-resistance. Its maximum drain-source voltage (VDS) can reach -150V, and the gate-source voltage (VGS) is ±20V, providing stable switching and control capabilities. The threshold voltage (Vth) of FX6ASJ-3-VB is -2V, the on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and the drain current (ID) supports up to -15A. Using Trench technology, this MOSFET provides excellent switching performance and efficient power management capabilities, and is suitable for a variety of high voltage control and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
1. **Package**: TO252
- The TO252 package has good heat dissipation performance and is suitable for applications handling medium to high power. Its design provides good thermal management and mechanical stability.
2. **Configuration**: Single P-channel
- The single P-channel MOSFET is suitable for negative voltage control and switching applications, and can effectively regulate current flow, especially in situations where negative voltage control is required.
3. **Drain-source voltage (VDS)**: -150V
- The MOSFET supports a drain-source voltage of up to -150V, suitable for applications such as high voltage load switching and power management.
4. **Gate-source voltage (VGS)**: ±20V
- The wide gate-source voltage range allows flexible control of the MOSFET, suitable for various high voltage environments.
5. **Threshold voltage (Vth)**: -2V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate-source voltage, improving switching efficiency and control sensitivity.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Moderate on-resistance helps reduce power consumption and heat generation, improve switching performance and overall efficiency.
7. **Drain current (ID)**: -15A
- Supports drain currents up to -15A, can handle larger load currents, and is suitable for switching applications with high current loads.
8. **Technology**: Trench
- Using Trench technology, the switching speed and on-resistance of the MOSFET are optimized, improving overall performance and efficiency.
1. **Package**: TO252
- The TO252 package has good heat dissipation performance and is suitable for applications handling medium to high power. Its design provides good thermal management and mechanical stability.
2. **Configuration**: Single P-channel
- The single P-channel MOSFET is suitable for negative voltage control and switching applications, and can effectively regulate current flow, especially in situations where negative voltage control is required.
3. **Drain-source voltage (VDS)**: -150V
- The MOSFET supports a drain-source voltage of up to -150V, suitable for applications such as high voltage load switching and power management.
4. **Gate-source voltage (VGS)**: ±20V
- The wide gate-source voltage range allows flexible control of the MOSFET, suitable for various high voltage environments.
5. **Threshold voltage (Vth)**: -2V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate-source voltage, improving switching efficiency and control sensitivity.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Moderate on-resistance helps reduce power consumption and heat generation, improve switching performance and overall efficiency.
7. **Drain current (ID)**: -15A
- Supports drain currents up to -15A, can handle larger load currents, and is suitable for switching applications with high current loads.
8. **Technology**: Trench
- Using Trench technology, the switching speed and on-resistance of the MOSFET are optimized, improving overall performance and efficiency.
Domain and module applications：
Applicable fields and modules
1. **High voltage load switching**:
The -150V drain-source voltage of FX6ASJ-3-VB makes it very suitable for high voltage load switching applications. In situations where high voltage control and switching are required, such as high voltage power switching, this MOSFET can provide stable and reliable switching operation.
2. **Power management**:
In power management modules, this MOSFET can be used for switching and regulating high voltage power supplies. Its low on-resistance and high drain current capability can effectively improve the efficiency and performance of power management systems, and is suitable for high current handling and power conversion.
3. **Industrial control**:
In industrial control systems, FX6ASJ-3-VB can be used to control the switching of high voltage loads. Its high voltage tolerance and high current handling capabilities make it suitable for load control and switching operations in various industrial applications.
4. **Motor drive**:
In motor drive applications, especially systems that require high voltage control, the FX6ASJ-3-VB provides reliable switching performance and high current handling capabilities, suitable for high voltage switching and control of motors.
5. **Automotive electronics**:
This MOSFET is also suitable for high voltage switching and load control in automotive electronics applications. It can operate stably under harsh environmental conditions and provide efficient control and switching capabilities for automotive electronic systems.
FX6ASJ-3-VB is a high-performance P-channel MOSFET suitable for a variety of high voltage load switching and power management applications. Its TO252 package and Trench technology enable it to perform well in high voltage, high current environments, making it an ideal choice in circuit design.
1. **High voltage load switching**:
The -150V drain-source voltage of FX6ASJ-3-VB makes it very suitable for high voltage load switching applications. In situations where high voltage control and switching are required, such as high voltage power switching, this MOSFET can provide stable and reliable switching operation.
2. **Power management**:
In power management modules, this MOSFET can be used for switching and regulating high voltage power supplies. Its low on-resistance and high drain current capability can effectively improve the efficiency and performance of power management systems, and is suitable for high current handling and power conversion.
3. **Industrial control**:
In industrial control systems, FX6ASJ-3-VB can be used to control the switching of high voltage loads. Its high voltage tolerance and high current handling capabilities make it suitable for load control and switching operations in various industrial applications.
4. **Motor drive**:
In motor drive applications, especially systems that require high voltage control, the FX6ASJ-3-VB provides reliable switching performance and high current handling capabilities, suitable for high voltage switching and control of motors.
5. **Automotive electronics**:
This MOSFET is also suitable for high voltage switching and load control in automotive electronics applications. It can operate stably under harsh environmental conditions and provide efficient control and switching capabilities for automotive electronic systems.
FX6ASJ-3-VB is a high-performance P-channel MOSFET suitable for a variety of high voltage load switching and power management applications. Its TO252 package and Trench technology enable it to perform well in high voltage, high current environments, making it an ideal choice in circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
