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FX6ASJ-06-VB Product details
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FX6ASJ-06-VB MOSFET Product Introduction
FX6ASJ-06-VB is a single P-channel MOSFET in a TO252 package, manufactured using Trench technology. This MOSFET is designed to handle a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 72mΩ at a VGS of 4.5V and 61mΩ at a VGS of 10V, and the maximum drain current (ID) is -30A. FX6ASJ-06-VB offers low on-resistance and high current handling capability, making it suitable for efficient P-channel switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology type**: Trench technology
Domain and module applications：
Application areas and module examples
The design features of FX6ASJ-06-VB make it very suitable for use in high-voltage and high-current P-channel switch applications. In power management systems, it can be used as a load switch to handle higher voltages and currents, improving system stability and efficiency. In DC-DC converters, FX6ASJ-06-VB can provide efficient switching control and optimize the power conversion process. In motor drive circuits, this MOSFET can be used for high-voltage and high-current motor control to ensure efficient motor drive and stable operation. In battery management systems, it can effectively manage the battery charging and discharging process and provide reliable switching functions in high-voltage applications. In high-power electronic devices and automotive electronic systems, FX6ASJ-06-VB is suitable for use as a P-channel switch, providing low on-resistance and high current handling capabilities, supporting high efficiency and long life of the equipment.
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