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FX6ASJ-03-VB Product details
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Product Introduction
FX6ASJ-03-VB is a high-performance single P-Channel MOSFET in TO252 package, designed for negative voltage and high current applications. Manufactured using Trench technology, this MOSFET has low on-resistance and high current handling capability, suitable for power management and switching circuits. Its high current capability and low on-resistance make it excel in a variety of applications, especially in negative voltage switching applications that require high efficiency and reliability.
FX6ASJ-03-VB is a high-performance single P-Channel MOSFET in TO252 package, designed for negative voltage and high current applications. Manufactured using Trench technology, this MOSFET has low on-resistance and high current handling capability, suitable for power management and switching circuits. Its high current capability and low on-resistance make it excel in a variety of applications, especially in negative voltage switching applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: FX6ASJ-03-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology**: Trench
- **Model**: FX6ASJ-03-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
FX6ASJ-03-VB MOSFET provides excellent performance in negative voltage and high current applications, and is particularly suitable for power management and switching circuits. Its low on-resistance and high current handling capability make it particularly suitable for use in power converters and load switching circuits. For example, in battery management systems, this MOSFET can efficiently handle high current loads to ensure system stability and high efficiency. In automotive electronic systems, such as high current switching modules and motor drive circuits, FX6ASJ-03-VB can also provide reliable performance. In addition, in high-power LED drivers and switching power supplies, this MOSFET can be used to effectively manage power and improve system efficiency.
FX6ASJ-03-VB MOSFET provides excellent performance in negative voltage and high current applications, and is particularly suitable for power management and switching circuits. Its low on-resistance and high current handling capability make it particularly suitable for use in power converters and load switching circuits. For example, in battery management systems, this MOSFET can efficiently handle high current loads to ensure system stability and high efficiency. In automotive electronic systems, such as high current switching modules and motor drive circuits, FX6ASJ-03-VB can also provide reliable performance. In addition, in high-power LED drivers and switching power supplies, this MOSFET can be used to effectively manage power and improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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