FX50KMJ-2-VB Product details
Product introduction:
FX50KMJ-2-VB is a single P-channel MOSFET packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of -100V, making it suitable for high-voltage applications. It supports a gate-source voltage (VGS) of ±20V and has a threshold voltage (Vth) of -2V, enabling effective switching at lower gate-source voltages. FX50KMJ-2-VB uses Trench technology, and its on-resistance is 37mΩ at a VGS of 4.5V and 33mΩ at a VGS of 10V. Its maximum drain current (ID) is -50A, capable of handling high-current applications. This MOSFET is suitable for high-power and high-voltage electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
- **Package type**: TO220F
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -50A
- **Technology**: Trench
Domain and module applications:
FX50KMJ-2-VB MOSFET is very suitable for various high power and high voltage applications due to its high drain-source voltage capability, low on-resistance and high drain current handling capability. Here are several typical application scenarios:
1. **Power management system**:
- In the power management system, FX50KMJ-2-VB can be used as a switching element for high voltage and high current loads. Its low on-resistance characteristics ensure efficient power switching operation, reduce power consumption and improve the overall efficiency of the system.
2. **DC-DC converter**:
- In the DC-DC converter, FX50KMJ-2-VB can be used as a synchronous rectifier or main switch to help achieve efficient voltage conversion. Its high current capability and low RDS(ON) characteristics ensure efficient energy transfer and are suitable for high power conversion applications.
3. **Motor drive**:
- In the motor drive system, FX50KMJ-2-VB can effectively control the switching state and current direction of the motor. Its high current handling capability and low on-resistance ensure the efficient and stable operation of the motor drive system, and is suitable for the drive control of DC motors and stepper motors.
4. **High power switching applications**:
- In high power switching applications, such as power converters and load switches, FX50KMJ-2-VB MOSFET can handle large currents and high voltages, providing reliable switching functions. Its excellent performance makes it suitable for demanding high power application scenarios.
5. **Battery protection and management**:
- In the battery management system, FX50KMJ-2-VB can be used as a protection switch to control the battery charging and discharging process. Its high current and high voltage capabilities ensure the safe and efficient operation of the battery under various operating conditions.
FX50KMJ-2-VB is widely used in power management, motor drive, high power switch and battery protection through its high voltage and current handling capability, low on-resistance and efficient Trench technology, providing a reliable solution for high power electronic systems.
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