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FX50KMJ-03-VB Product details
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Product Introduction
**FX50KMJ-03-VB** is a high-performance P-Channel MOSFET in TO220F package. This MOSFET has high current carrying capacity and low on-resistance, and is designed for applications that require efficient switching control. Its maximum drain-source voltage (VDS) is -30V and can handle drain currents up to -55A. The use of Trench technology enables it to provide extremely low on-resistance at low gate-source voltage, which is suitable for efficient power management and load switching applications.
**FX50KMJ-03-VB** is a high-performance P-Channel MOSFET in TO220F package. This MOSFET has high current carrying capacity and low on-resistance, and is designed for applications that require efficient switching control. Its maximum drain-source voltage (VDS) is -30V and can handle drain currents up to -55A. The use of Trench technology enables it to provide extremely low on-resistance at low gate-source voltage, which is suitable for efficient power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain Current (ID)**: -55A
- **Technology**: Trench
- **Package**: TO220F
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain Current (ID)**: -55A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
FX50KMJ-03-VB performs well in power management systems, especially for high voltage applications that require high current and efficient switching control. Its low on-resistance and high current capability give it excellent performance in DC-DC converters and power switch modules, improving the overall efficiency and reliability of the system.
2. **Battery management and protection circuits**:
This MOSFET can be used for high current switching applications in battery management systems. Due to its high current carrying capacity and low on-resistance, it can effectively control the current during battery charging and discharging, while providing excellent battery protection performance, suitable for high power battery management and protection circuits.
3. **High power load switch**:
FX50KMJ-03-VB is suitable for high power load switching, such as industrial automation equipment and motor drive systems. It can handle drain currents up to -55A, ensuring stable switching operation and high efficiency under high power loads, and is suitable for various load switches and control modules.
4. **Inverter and Power Amplifier**:
In inverter and power amplifier applications, the high current and low on-resistance characteristics of the FX50KMJ-03-VB make it very suitable for use in switching and control circuits. Its reliable performance and high efficiency enable it to provide stable operation and excellent thermal management in high power inverters and power amplifiers.
With its high current carrying capacity, low on-resistance and high switching efficiency, the FX50KMJ-03-VB meets the needs of multiple application areas such as power management, battery protection, high power load switches and inverters, providing efficient and reliable solutions.
1. **Power management system**:
FX50KMJ-03-VB performs well in power management systems, especially for high voltage applications that require high current and efficient switching control. Its low on-resistance and high current capability give it excellent performance in DC-DC converters and power switch modules, improving the overall efficiency and reliability of the system.
2. **Battery management and protection circuits**:
This MOSFET can be used for high current switching applications in battery management systems. Due to its high current carrying capacity and low on-resistance, it can effectively control the current during battery charging and discharging, while providing excellent battery protection performance, suitable for high power battery management and protection circuits.
3. **High power load switch**:
FX50KMJ-03-VB is suitable for high power load switching, such as industrial automation equipment and motor drive systems. It can handle drain currents up to -55A, ensuring stable switching operation and high efficiency under high power loads, and is suitable for various load switches and control modules.
4. **Inverter and Power Amplifier**:
In inverter and power amplifier applications, the high current and low on-resistance characteristics of the FX50KMJ-03-VB make it very suitable for use in switching and control circuits. Its reliable performance and high efficiency enable it to provide stable operation and excellent thermal management in high power inverters and power amplifiers.
With its high current carrying capacity, low on-resistance and high switching efficiency, the FX50KMJ-03-VB meets the needs of multiple application areas such as power management, battery protection, high power load switches and inverters, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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