FX3ASJ-3-VB Product details
Product introduction:
FX3ASJ-3-VB is a high-performance P-channel MOSFET in TO252 package, designed for applications requiring high voltage and high-efficiency switching operation. This MOSFET has a drain-source voltage (VDS) of -150V, suitable for handling high voltage applications. The gate-source voltage (VGS) range is ±20V, ensuring stability under various driving conditions. The threshold voltage (Vth) is -2V, allowing the MOSFET to be turned on at a lower gate voltage. FX3ASJ-3-VB uses Trench technology and has a low on-resistance (RDS(ON)), which is 160mΩ at VGS of 10V. This MOSFET supports a drain current (ID) of up to -15A, suitable for circuit designs that require high current and high voltage.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -150V | -2V | -15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
1. **Package type**: TO252
2. **Configuration**: Single P-Channel
3. **Drain-source voltage (VDS)**: -150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
7. **Drain current (ID)**: -15A
8. **Technology**: Trench
9. **Other features**: High voltage withstand capability, suitable for high current and high voltage applications, low on-resistance.
Domain and module applications:
Due to its high voltage tolerance and low on-resistance characteristics, FX3ASJ-3-VB MOSFET has significant application advantages in the following fields and modules:
1. **High voltage power switch**: In the high voltage power switch circuit, FX3ASJ-3-VB can stably control the switching state of the high voltage power supply. Its -150V VDS allows it to handle high voltage applications such as switching and regulating high voltage DC power supplies.
2. **Power management**: In power management systems, FX3ASJ-3-VB MOSFET can be used as a core component for power management and load switching. Its high current carrying capacity and low on-resistance make it suitable for high power density power management applications to ensure efficient operation of the system.
3. **Inverter**: In inverter applications, FX3ASJ-3-VB can be used as a P-channel MOSFET to control the conversion of high voltage DC current. Its high voltage tolerance enables it to work stably in inverter circuits and improve the efficiency of the system.
4. **Automotive electronics**: In automotive electronic systems, FX3ASJ-3-VB is suitable for high-voltage power switching and load control. Its high voltage and high current handling capabilities enable it to provide stable and reliable performance in the car's power management system.
5. **Industrial control systems**: In industrial control systems, FX3ASJ-3-VB is able to handle high voltage and high current loads, such as industrial motor control and high-power load switching. Its stability and high efficiency make it an important switching element in industrial applications.
Technical support:
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