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FX30KMJ-06-VB Product details

Product introduction:

1. FX30KMJ-06-VB MOSFET Product Introduction

FX30KMJ-06-VB is a high-performance single P-channel MOSFET in TO220F package. This MOSFET adopts advanced Trench technology and is designed to provide excellent switching performance and low power consumption. Its main features include low on-resistance and high current handling capability, making it very suitable for use in applications requiring high efficiency and high reliability. FX30KMJ-06-VB performs well in power management, load switching and power conversion, and can effectively improve the overall performance of the circuit.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-P -60V -1.7V -30A 50mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-P
2. FX30KMJ-06-VB MOSFET detailed parameter description

- **Package form**: TO220F
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=4.5V
- 50mΩ @ VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench

Domain and module applications:

III. FX30KMJ-06-VB MOSFET Application Fields and Module Examples

1. **Power Switch**: The low on-resistance and high current handling capability of the FX30KMJ-06-VB make it very suitable for use in power switching circuits. Its high-efficiency switching performance helps reduce power consumption and improve the overall efficiency and stability of the power management system.

2. **Load Switch**: In load switching applications, the FX30KMJ-06-VB can effectively control the switching state of the load. Its high current capability and low on-resistance ensure the reliability and efficiency of the load switching operation, and is suitable for various load control occasions.

3. **Inverter and Power Converter**: This MOSFET is suitable for inverter and power converter circuits, improving the power conversion efficiency of the system through efficient switching performance. Its high current carrying capacity makes it perform well in high-power applications.

4. **Battery protection circuit**: FX30KMJ-06-VB is also suitable for battery protection circuits, which can effectively control the battery charging and discharging process. Its low on-resistance and high current capability provide reliable support for battery protection and ensure battery safety.

5. **High-power LED driver**: In high-power LED driver circuits, FX30KMJ-06-VB can provide stable switch control to ensure efficient operation of LEDs. Its low on-resistance helps improve the energy efficiency and reliability of the system.

In summary, the single P-channel design and excellent performance of FX30KMJ-06-VB MOSFET make it outstanding in the fields of power switching, load control, inverter, battery protection and high-power LED driving, providing efficient and reliable solutions for various power and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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