FX30ASJ-03-VB Product details
Product introduction:
FX30ASJ-03-VB is a high-performance single P-channel MOSFET in TO252 package, designed for negative voltage applications. The maximum drain-source voltage of this MOSFET is -30V, making it suitable for stable operation in a negative voltage environment. Its threshold voltage is -1.7V, ensuring that it can be turned on at a lower gate voltage. Using advanced trench technology (Trench), FX30ASJ-03-VB provides low on-resistance: 46mΩ@VGS=4.5V and 33mΩ@VGS=10V, which can effectively reduce power loss. Its drain current capability is -38A, which is suitable for applications handling medium to high current loads, and is widely used in negative voltage switches, power management, and power converters.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID)**: -38A
- **Technology type**: Trench technology (Trench)
Domain and module applications:
1. **Negative voltage switch**:
FX30ASJ-03-VB is an ideal choice for negative voltage switch applications. In negative voltage power supply systems, this P-channel MOSFET can be used as a negative voltage switch to ensure reliable switching of the system. Its low on-resistance and high drain current capability make it excellent in negative voltage applications.
2. **Negative voltage power management**:
In negative voltage power management systems, FX30ASJ-03-VB can effectively control the switching of negative voltage power supplies. It can be used in negative voltage regulators to ensure power supply stability and is suitable for negative voltage power management applications that require high efficiency.
3. **Power converter**:
In power converters, especially those that need to handle negative voltages, FX30ASJ-03-VB can be used as the main switching element. Its low on-resistance and high current capability help improve the efficiency of the converter and reduce power losses.
4. **Electric Vehicles and Power Modules**:
In electric vehicles and power modules, the FX30ASJ-03-VB can be used for switch control in negative voltage environments. For example, it can be used for negative voltage switching in motor drive circuits to help achieve stable current flow and effective power management.
The design of the FX30ASJ-03-VB makes it excel in applications such as negative voltage switching, power management, power converters, and electric vehicles, providing an efficient and stable solution for a variety of occasions where negative voltage handling is required.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image