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FX20VSJ-3-VB Product details
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Product Introduction: FX20VSJ-3-VB
FX20VSJ-3-VB is a single P-channel MOSFET in TO263 package. It is designed for high voltage load switching applications and supports a drain-source voltage (VDS) of up to -150V. The gate-source voltage (VGS) of this MOSFET is ±20V, and it can operate stably under higher voltage conditions. The threshold voltage (Vth) of FX20VSJ-3-VB is -2V, the on-resistance (RDS(ON)) is 150mΩ (at VGS=10V), and it supports a drain current (ID) of up to -20A. Using Trench technology, this P-type MOSFET provides excellent switching performance and efficient power management capabilities, and is suitable for circuit designs that require high voltage tolerance and low power consumption.
FX20VSJ-3-VB is a single P-channel MOSFET in TO263 package. It is designed for high voltage load switching applications and supports a drain-source voltage (VDS) of up to -150V. The gate-source voltage (VGS) of this MOSFET is ±20V, and it can operate stably under higher voltage conditions. The threshold voltage (Vth) of FX20VSJ-3-VB is -2V, the on-resistance (RDS(ON)) is 150mΩ (at VGS=10V), and it supports a drain current (ID) of up to -20A. Using Trench technology, this P-type MOSFET provides excellent switching performance and efficient power management capabilities, and is suitable for circuit designs that require high voltage tolerance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | 150mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- The TO263 package has good heat dissipation performance and is suitable for applications that handle higher power. It provides a large contact area, which helps to improve heat dissipation efficiency and stability.
2. **Configuration**: Single P-channel
- The single P-channel MOSFET is suitable for negative voltage switching and control applications, and can effectively regulate current flow, especially in situations where negative voltage control is required.
3. **Drain-source voltage (VDS)**: -150V
- Supports drain-source voltages up to -150V, making it suitable for high voltage load switching and power management applications.
4. **Gate-source voltage (VGS)**: ±20V
- Provides a wide gate-source voltage range, allowing precise control and switching of the MOSFET, suitable for various high voltage environments.
5. **Threshold voltage (Vth)**: -2V
- The low threshold voltage allows the MOSFET to be turned on at a lower gate-source voltage, improving control sensitivity and switching efficiency.
6. **On-resistance (RDS(ON))**: 150mΩ @ VGS=10V
- The low on-resistance helps reduce power consumption and heat generation, and improves switching performance and efficiency.
7. **Drain current (ID)**: -20A
- Supports drain currents up to -20A, suitable for switching applications with high current loads.
8. **Technology**: Trench
- The Trench technology is used to optimize the switching speed and on-resistance of the MOSFET, improving overall performance and efficiency.
1. **Package**: TO263
- The TO263 package has good heat dissipation performance and is suitable for applications that handle higher power. It provides a large contact area, which helps to improve heat dissipation efficiency and stability.
2. **Configuration**: Single P-channel
- The single P-channel MOSFET is suitable for negative voltage switching and control applications, and can effectively regulate current flow, especially in situations where negative voltage control is required.
3. **Drain-source voltage (VDS)**: -150V
- Supports drain-source voltages up to -150V, making it suitable for high voltage load switching and power management applications.
4. **Gate-source voltage (VGS)**: ±20V
- Provides a wide gate-source voltage range, allowing precise control and switching of the MOSFET, suitable for various high voltage environments.
5. **Threshold voltage (Vth)**: -2V
- The low threshold voltage allows the MOSFET to be turned on at a lower gate-source voltage, improving control sensitivity and switching efficiency.
6. **On-resistance (RDS(ON))**: 150mΩ @ VGS=10V
- The low on-resistance helps reduce power consumption and heat generation, and improves switching performance and efficiency.
7. **Drain current (ID)**: -20A
- Supports drain currents up to -20A, suitable for switching applications with high current loads.
8. **Technology**: Trench
- The Trench technology is used to optimize the switching speed and on-resistance of the MOSFET, improving overall performance and efficiency.
Domain and module applications：
Applicable fields and modules
1. **High voltage load switch**:
The -150V drain-source voltage of FX20VSJ-3-VB makes it suitable for high voltage load switch applications. In high voltage environments, it can stably switch and control loads to ensure normal operation and safety protection of the circuit.
2. **Power management**:
In power management modules, this MOSFET can be used for switching and regulating high voltage power supplies. Its low on-resistance and high drain current capability ensure efficient power conversion and management, suitable for power supply designs that require high current handling and low power consumption.
3. **Motor drive**:
In motor drive applications, FX20VSJ-3-VB can be used to control the switching and regulation of high voltage motors. Its high voltage tolerance and high current handling capabilities enable it to work stably in motor drive systems.
4. **Industrial Control**:
FX20VSJ-3-VB is suitable for high voltage switching and load control in industrial control systems. It can work reliably in harsh industrial environments, providing efficient switching performance and stability.
5. **Automotive Electronics**:
In automotive electronics applications, especially modules that require high voltage control, such as high voltage power switching and load control, FX20VSJ-3-VB provides good switching performance and current handling capabilities to meet the requirements of automotive systems.
FX20VSJ-3-VB is a high-performance P-channel MOSFET suitable for a variety of high voltage load switching and power management applications. Its TO263 package and Trench technology enable it to perform well in high voltage, high current environments, making it an ideal choice in circuit design.
1. **High voltage load switch**:
The -150V drain-source voltage of FX20VSJ-3-VB makes it suitable for high voltage load switch applications. In high voltage environments, it can stably switch and control loads to ensure normal operation and safety protection of the circuit.
2. **Power management**:
In power management modules, this MOSFET can be used for switching and regulating high voltage power supplies. Its low on-resistance and high drain current capability ensure efficient power conversion and management, suitable for power supply designs that require high current handling and low power consumption.
3. **Motor drive**:
In motor drive applications, FX20VSJ-3-VB can be used to control the switching and regulation of high voltage motors. Its high voltage tolerance and high current handling capabilities enable it to work stably in motor drive systems.
4. **Industrial Control**:
FX20VSJ-3-VB is suitable for high voltage switching and load control in industrial control systems. It can work reliably in harsh industrial environments, providing efficient switching performance and stability.
5. **Automotive Electronics**:
In automotive electronics applications, especially modules that require high voltage control, such as high voltage power switching and load control, FX20VSJ-3-VB provides good switching performance and current handling capabilities to meet the requirements of automotive systems.
FX20VSJ-3-VB is a high-performance P-channel MOSFET suitable for a variety of high voltage load switching and power management applications. Its TO263 package and Trench technology enable it to perform well in high voltage, high current environments, making it an ideal choice in circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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