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FX20KMJ-2-VB Product details
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FX20KMJ-2-VB MOSFET Product Introduction
FX20KMJ-2-VB is a single P-channel MOSFET, packaged in TO220F and manufactured using Trench technology. It is designed to withstand a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V. The turn-on voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 120mΩ at VGS of 4.5V and 100mΩ at VGS of 10V, and the maximum drain current (ID) is -23A. FX20KMJ-2-VB is suitable for high-voltage, high-current P-channel switch applications, providing efficient switching performance and low power consumption.
FX20KMJ-2-VB is a single P-channel MOSFET, packaged in TO220F and manufactured using Trench technology. It is designed to withstand a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V. The turn-on voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 120mΩ at VGS of 4.5V and 100mΩ at VGS of 10V, and the maximum drain current (ID) is -23A. FX20KMJ-2-VB is suitable for high-voltage, high-current P-channel switch applications, providing efficient switching performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: -23A
- **Technology type**: Trench technology
- **Package type**: TO220F
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: -23A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
The high withstand voltage and low on-resistance of FX20KMJ-2-VB make it very suitable for various high voltage and high current switching applications. In power management systems, this MOSFET can be used as a load switch to handle high voltage loads and ensure the stability and efficiency of the system. In DC-DC converters, FX20KMJ-2-VB can effectively control high voltage output and improve conversion efficiency. In motor drive circuits, it can handle higher voltages and currents, provide stable switching functions, and support efficient motor driving. In battery management systems, this MOSFET can be used for high voltage switches to help manage the battery charging and discharging process. In high-power electronic devices and automotive electronic systems, FX20KMJ-2-VB is also suitable for use as a high voltage P-channel switch, providing reliable switching control and low power consumption solutions.
The high withstand voltage and low on-resistance of FX20KMJ-2-VB make it very suitable for various high voltage and high current switching applications. In power management systems, this MOSFET can be used as a load switch to handle high voltage loads and ensure the stability and efficiency of the system. In DC-DC converters, FX20KMJ-2-VB can effectively control high voltage output and improve conversion efficiency. In motor drive circuits, it can handle higher voltages and currents, provide stable switching functions, and support efficient motor driving. In battery management systems, this MOSFET can be used for high voltage switches to help manage the battery charging and discharging process. In high-power electronic devices and automotive electronic systems, FX20KMJ-2-VB is also suitable for use as a high voltage P-channel switch, providing reliable switching control and low power consumption solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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