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FX20ASJ-2-VB Product details
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1. FX20ASJ-2-VB Product Introduction
FX20ASJ-2-VB is a single P-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of -100V, suitable for high-voltage applications. This MOSFET supports a gate-source voltage (VGS) of ±20V and has a threshold voltage (Vth) of -2V, which enables effective switching at lower drive voltages. FX20ASJ-2-VB uses Trench technology to provide good on-resistance characteristics. When VGS is 4.5V, the on-resistance is 120mΩ; when VGS is 10V, the on-resistance drops to 100mΩ. Its maximum drain current (ID) is -16A, suitable for applications with high current requirements.
FX20ASJ-2-VB is a single P-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of -100V, suitable for high-voltage applications. This MOSFET supports a gate-source voltage (VGS) of ±20V and has a threshold voltage (Vth) of -2V, which enables effective switching at lower drive voltages. FX20ASJ-2-VB uses Trench technology to provide good on-resistance characteristics. When VGS is 4.5V, the on-resistance is 120mΩ; when VGS is 10V, the on-resistance drops to 100mΩ. Its maximum drain current (ID) is -16A, suitable for applications with high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. FX20ASJ-2-VB detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON)）**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Drain current (ID)**: -16A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON)）**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Drain current (ID)**: -16A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
FX20ASJ-2-VB MOSFET is suitable for a variety of high power and high voltage applications due to its high drain-source voltage capability, low on-resistance and high drain current handling capability. Here are several typical application scenarios:
1. **Power management**:
- In power management circuits, FX20ASJ-2-VB can be used as a power switch or load switch. Its high drain-source voltage and low on-resistance make it suitable for high-voltage power switches to ensure the stability and efficiency of the power system.
2. **DC-DC converter**:
- In DC-DC converters, FX20ASJ-2-VB as a switching element can effectively control the flow of current and voltage conversion. Its high current capability and low RDS(ON) characteristics ensure efficient power conversion and better power density.
3. **Power amplifier**:
- In power amplifier circuits, FX20ASJ-2-VB can be used for signal amplification and power regulation. Its high drain current and low on-resistance characteristics ensure efficient operation and low power loss of the amplifier.
4. **Battery protection circuit**:
- FX20ASJ-2-VB can be used for switching and control applications in battery protection circuits. Its high voltage capability and low on-resistance enable it to effectively control the charging and discharging process, protecting the battery from overvoltage and overcurrent damage.
5. **High-voltage switching applications**:
- In applications requiring high-voltage switching, such as motor drive and high-voltage load control, the FX20ASJ-2-VB MOSFET is able to provide reliable switching functions. Its high drain-source voltage and high current handling capabilities make it suitable for switching control in various high-voltage environments.
FX20ASJ-2-VB is widely used in power management, DC-DC conversion, battery protection, and high-voltage switching through its high voltage and current handling capabilities, low on-resistance, and efficient Trench technology, providing a reliable solution for high-power and high-voltage applications.
FX20ASJ-2-VB MOSFET is suitable for a variety of high power and high voltage applications due to its high drain-source voltage capability, low on-resistance and high drain current handling capability. Here are several typical application scenarios:
1. **Power management**:
- In power management circuits, FX20ASJ-2-VB can be used as a power switch or load switch. Its high drain-source voltage and low on-resistance make it suitable for high-voltage power switches to ensure the stability and efficiency of the power system.
2. **DC-DC converter**:
- In DC-DC converters, FX20ASJ-2-VB as a switching element can effectively control the flow of current and voltage conversion. Its high current capability and low RDS(ON) characteristics ensure efficient power conversion and better power density.
3. **Power amplifier**:
- In power amplifier circuits, FX20ASJ-2-VB can be used for signal amplification and power regulation. Its high drain current and low on-resistance characteristics ensure efficient operation and low power loss of the amplifier.
4. **Battery protection circuit**:
- FX20ASJ-2-VB can be used for switching and control applications in battery protection circuits. Its high voltage capability and low on-resistance enable it to effectively control the charging and discharging process, protecting the battery from overvoltage and overcurrent damage.
5. **High-voltage switching applications**:
- In applications requiring high-voltage switching, such as motor drive and high-voltage load control, the FX20ASJ-2-VB MOSFET is able to provide reliable switching functions. Its high drain-source voltage and high current handling capabilities make it suitable for switching control in various high-voltage environments.
FX20ASJ-2-VB is widely used in power management, DC-DC conversion, battery protection, and high-voltage switching through its high voltage and current handling capabilities, low on-resistance, and efficient Trench technology, providing a reliable solution for high-power and high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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