FX20ASJ-2-T13-VB Product details
Product introduction:
**FX20ASJ-2-T13-VB** is a high-performance P-Channel MOSFET in a TO252 package. This MOSFET is designed for high-voltage switching applications with a drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -16A. Using Trench technology, it has excellent low on-resistance and high switching speed, and is particularly suitable for operation in environments requiring high voltage and high current. Its gate-source voltage (VGS) allows operation in the range of ±20V, providing greater design flexibility.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Drain Current (ID)**: -16A
- **Technology**: Trench
Domain and module applications:
1. **High-voltage power management**:
FX20ASJ-2-T13-VB performs well in high-voltage power management systems, especially for high-voltage applications that need to control and switch loads. Its high withstand voltage characteristics and low on-resistance make it very suitable for high-voltage DC-DC converters, power switches and other high-voltage power management modules, improving the overall efficiency and reliability of the system.
2. **Battery management system**:
In battery management systems, FX20ASJ-2-T13-VB can be used for high-voltage battery switches and protection circuits. Its low on-resistance and high current handling capability enable it to effectively control the current during battery charging and discharging, while ensuring the stability and safety of the system.
3. **Load switch**:
The high current capability and low on-resistance of this MOSFET make it suitable for a variety of load switching applications. For example, in switching power supplies, lighting controls, and motor drive modules, it can provide efficient switching control and reliable load switching performance to optimize the power management of the circuit.
4. **Inverter and electric drive system**:
FX20ASJ-2-T13-VB is also suitable for inverter and electric drive systems. These applications usually require high current and high voltage switching control. This MOSFET provides the required switching speed and low on-resistance to ensure high efficiency and long life of the system.
With its high withstand voltage, low on-resistance and high current handling capability, FX20ASJ-2-T13-VB meets the needs of multiple application areas such as high-voltage power management, battery protection, load switching and electric drive systems, providing an efficient and reliable solution for the system.
Technical support:
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