FWZ44ATM-VB Product details
Product introduction:
FWZ44ATM-VB is a high-performance N-channel MOSFET in TO263 package, designed for applications requiring high current and high-efficiency switching performance. It has a drain-source voltage (VDS) of 60V, suitable for power supplies and switching circuits in the medium voltage range. The gate-source voltage (VGS) range of this MOSFET is ±20V, ensuring stable performance under different driving conditions. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to be turned on at a lower gate voltage. FWZ44ATM-VB uses Trench technology and has a low on-resistance (RDS(ON)), which is 35mΩ at VGS of 4.5V and 32mΩ at VGS of 10V. This MOSFET supports a drain current (ID) of up to 50A, suitable for high power density and high-efficiency circuit design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Package type**: TO263
2. **Configuration**: Single N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
7. **Drain current (ID)**: 50A
8. **Technology**: Trench
9. **Other features**: High current carrying capacity, low on-resistance, suitable for high power density applications.
Domain and module applications:
The high current carrying capacity and low on-resistance of FWZ44ATM-VB MOSFET make it excel in the following fields and modules:
1. **Power management**: In power management circuits, FWZ44ATM-VB MOSFET is very suitable for use as a switching element or the main switch in a power converter. Its high current capability and low on-resistance help improve power conversion efficiency and reduce power loss, making it suitable for efficient DC-DC converters and power distribution circuits.
2. **Motor drive**: In motor drive applications, such as in H-bridge circuits, FWZ44ATM-VB can be used as a high current switch. Its high current handling capability and low on-resistance can effectively drive the motor and improve the stability and efficiency of motor control.
3. **LED lighting**: In LED drive circuits, FWZ44ATM-VB can be used as a switch or dimming device for LED lamps. Its low on-resistance characteristics help improve the efficiency and stability of LED drivers, making it suitable for lighting systems that require high power and high efficiency.
4. **Consumer Electronics**: FWZ44ATM-VB is suitable for power switching and management circuits in a variety of consumer electronics products, such as smartphones, tablets, and portable devices. In these devices, it can help achieve efficient power management and control, ensuring the stability and performance of the equipment.
5. **Automotive Electronics**: In automotive electronic systems, FWZ44ATM-VB can be used for power management and load switching. Its high current capability and high temperature resistance make it suitable for high-power switching and control applications in automotive power systems.
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