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FWZ44ATM-VB Product details

Product introduction:

1. FWZ44ATM-VB MOSFET Product Introduction

FWZ44ATM-VB is a high-performance N-channel MOSFET in TO263 package, designed for applications requiring high current and high-efficiency switching performance. It has a drain-source voltage (VDS) of 60V, suitable for power supplies and switching circuits in the medium voltage range. The gate-source voltage (VGS) range of this MOSFET is ±20V, ensuring stable performance under different driving conditions. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to be turned on at a lower gate voltage. FWZ44ATM-VB uses Trench technology and has a low on-resistance (RDS(ON)), which is 35mΩ at VGS of 4.5V and 32mΩ at VGS of 10V. This MOSFET supports a drain current (ID) of up to 50A, suitable for high power density and high-efficiency circuit design.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description of FWZ44ATM-VB MOSFET

1. **Package type**: TO263
2. **Configuration**: Single N-Channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
7. **Drain current (ID)**: 50A
8. **Technology**: Trench
9. **Other features**: High current carrying capacity, low on-resistance, suitable for high power density applications.

Domain and module applications:

3. Application fields and module examples of FWZ44ATM-VB MOSFET

The high current carrying capacity and low on-resistance of FWZ44ATM-VB MOSFET make it excel in the following fields and modules:

1. **Power management**: In power management circuits, FWZ44ATM-VB MOSFET is very suitable for use as a switching element or the main switch in a power converter. Its high current capability and low on-resistance help improve power conversion efficiency and reduce power loss, making it suitable for efficient DC-DC converters and power distribution circuits.

2. **Motor drive**: In motor drive applications, such as in H-bridge circuits, FWZ44ATM-VB can be used as a high current switch. Its high current handling capability and low on-resistance can effectively drive the motor and improve the stability and efficiency of motor control.

3. **LED lighting**: In LED drive circuits, FWZ44ATM-VB can be used as a switch or dimming device for LED lamps. Its low on-resistance characteristics help improve the efficiency and stability of LED drivers, making it suitable for lighting systems that require high power and high efficiency.

4. **Consumer Electronics**: FWZ44ATM-VB is suitable for power switching and management circuits in a variety of consumer electronics products, such as smartphones, tablets, and portable devices. In these devices, it can help achieve efficient power management and control, ensuring the stability and performance of the equipment.

5. **Automotive Electronics**: In automotive electronic systems, FWZ44ATM-VB can be used for power management and load switching. Its high current capability and high temperature resistance make it suitable for high-power switching and control applications in automotive power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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