中文
English
FW644BTM-VB Product details
Back to previous pageProduct introduction：
Product Introduction: FW644BTM-VB
FW644BTM-VB is a single N-channel MOSFET in TO263 package. It is designed for high voltage applications and supports drain-source voltage (VDS) up to 250V. The gate-source voltage (VGS) of this MOSFET is ±20V, which is suitable for circuits requiring high voltage protection and control. The on-resistance (RDS(ON)) of FW644BTM-VB is 230mΩ (at VGS=10V) and can handle a drain current (ID) of up to 16A. Using Trench technology, this MOSFET provides good switching performance and low power consumption, and is suitable for a variety of high voltage and high current power management and switching applications.
FW644BTM-VB is a single N-channel MOSFET in TO263 package. It is designed for high voltage applications and supports drain-source voltage (VDS) up to 250V. The gate-source voltage (VGS) of this MOSFET is ±20V, which is suitable for circuits requiring high voltage protection and control. The on-resistance (RDS(ON)) of FW644BTM-VB is 230mΩ (at VGS=10V) and can handle a drain current (ID) of up to 16A. Using Trench technology, this MOSFET provides good switching performance and low power consumption, and is suitable for a variety of high voltage and high current power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- The TO263 package has good heat dissipation performance and is suitable for high power applications that require thermal management. It provides a large contact area, which helps to improve heat dissipation efficiency.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high voltage switching and regulation applications, and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 250V
- Supports drain-source voltages up to 250V, suitable for switching and power management applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Provides a wide gate-source voltage range, allowing precise control and switching of the MOSFET.
5. **Threshold Voltage (Vth)**: 3.5V
- The higher threshold voltage ensures that the MOSFET starts to conduct at a higher gate-source voltage, which helps improve the stability and protection of the circuit.
6. **On-resistance (RDS(ON))**:
- 230mΩ @ VGS=10V
- The lower on-resistance helps reduce power consumption and heat generation, and improves switching efficiency.
7. **Drain Current (ID)**: 16A
- Supports drain currents up to 16A, suitable for applications that need to handle high currents.
8. **Technology**: Trench
- Using Trench technology, the switching speed and on-resistance are optimized, improving the overall performance and efficiency of the MOSFET.
1. **Package**: TO263
- The TO263 package has good heat dissipation performance and is suitable for high power applications that require thermal management. It provides a large contact area, which helps to improve heat dissipation efficiency.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET is suitable for high voltage switching and regulation applications, and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 250V
- Supports drain-source voltages up to 250V, suitable for switching and power management applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Provides a wide gate-source voltage range, allowing precise control and switching of the MOSFET.
5. **Threshold Voltage (Vth)**: 3.5V
- The higher threshold voltage ensures that the MOSFET starts to conduct at a higher gate-source voltage, which helps improve the stability and protection of the circuit.
6. **On-resistance (RDS(ON))**:
- 230mΩ @ VGS=10V
- The lower on-resistance helps reduce power consumption and heat generation, and improves switching efficiency.
7. **Drain Current (ID)**: 16A
- Supports drain currents up to 16A, suitable for applications that need to handle high currents.
8. **Technology**: Trench
- Using Trench technology, the switching speed and on-resistance are optimized, improving the overall performance and efficiency of the MOSFET.
Domain and module applications：
Applicable fields and modules
1. **High voltage switching**:
The 250V drain-source voltage of FW644BTM-VB makes it an ideal choice for high voltage switching applications. It can operate stably in high voltage environments, such as in high voltage DC-DC converters and power management circuits to control current flow and protect circuits from overvoltage.
2. **Power management**:
This MOSFET is suitable for high voltage power management modules such as switching power supplies and inverters. Its low on-resistance and high drain current capability ensure efficient power conversion and management, suitable for application scenarios that require high power handling.
3. **Industrial control**:
In industrial control systems, FW644BTM-VB can be used to control high voltage devices such as motor drives and heaters. Its high voltage handling capability and stability enable it to work reliably in harsh industrial environments.
4. **Home Appliances and Consumer Electronics**:
In home appliances and consumer electronics, such as high-power power adapters and motor control systems, the FW644BTM-VB provides efficient switching performance and low power consumption, ensuring efficient operation and long life of the equipment.
5. **Automotive Electronics**:
This MOSFET is also suitable for automotive electronics applications, such as automotive power management and high-voltage load switching. Its high voltage tolerance and high current handling capabilities enable it to meet the requirements of automotive systems.
The FW644BTM-VB is a high-performance N-channel MOSFET suitable for a variety of high-voltage, high-current applications. Its TO263 package, Trench technology, and excellent electrical performance make it an ideal choice for power management and high-voltage switching applications.
1. **High voltage switching**:
The 250V drain-source voltage of FW644BTM-VB makes it an ideal choice for high voltage switching applications. It can operate stably in high voltage environments, such as in high voltage DC-DC converters and power management circuits to control current flow and protect circuits from overvoltage.
2. **Power management**:
This MOSFET is suitable for high voltage power management modules such as switching power supplies and inverters. Its low on-resistance and high drain current capability ensure efficient power conversion and management, suitable for application scenarios that require high power handling.
3. **Industrial control**:
In industrial control systems, FW644BTM-VB can be used to control high voltage devices such as motor drives and heaters. Its high voltage handling capability and stability enable it to work reliably in harsh industrial environments.
4. **Home Appliances and Consumer Electronics**:
In home appliances and consumer electronics, such as high-power power adapters and motor control systems, the FW644BTM-VB provides efficient switching performance and low power consumption, ensuring efficient operation and long life of the equipment.
5. **Automotive Electronics**:
This MOSFET is also suitable for automotive electronics applications, such as automotive power management and high-voltage load switching. Its high voltage tolerance and high current handling capabilities enable it to meet the requirements of automotive systems.
The FW644BTM-VB is a high-performance N-channel MOSFET suitable for a variety of high-voltage, high-current applications. Its TO263 package, Trench technology, and excellent electrical performance make it an ideal choice for power management and high-voltage switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
