Product introduction：
Product Introduction: FW342-TL-VB MOSFET
FW342-TL-VB is a high-performance dual MOSFET in SOP8 package. The device has two configurations, N-Channel and P-Channel, and is suitable for circuits that require bipolar switching functions. Its maximum drain-source voltage is ±30V, the gate-source voltage is ±20V, and the threshold voltages are 1.6V (N-Channel) and -1.7V (P-Channel). When VGS is 4.5V, the on-resistance of N-Channel is 24mΩ and that of P-Channel is 50mΩ; when VGS is 10V, the on-resistance of N-Channel is 18mΩ and that of P-Channel is 40mΩ. The drain current of FW342-TL-VB can reach ±8A, and it uses Trench technology to provide excellent switching performance and low on-resistance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Dual N-Channel and P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P-Channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: ±8A
- **Technology Type**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Power management**: FW342-TL-VB can be used as an efficient switching element in power management systems, supporting bidirectional current control. It is suitable for bipolar power converters and regulators to achieve efficient energy transfer and reduce power consumption. Its low on-resistance and high current carrying capacity help improve the efficiency of power systems, especially in high-density circuits.
2. **H-bridge circuit**: In the H-bridge circuit, FW342-TL-VB can provide bipolar switching functions to support forward and reverse control of the motor. The combination of N-Channel and P-Channel MOSFETs enables it to effectively control the start, stop and direction of the motor, and is widely used in power tools, electric vehicles, robots and other fields.
3. **DC-DC converter**: This MOSFET can be used as an efficient switching element in the DC-DC converter, providing stable voltage regulation and efficient energy conversion. Its bipolar configuration is particularly suitable for applications that require reverse current or bidirectional current, such as bidirectional DC-DC conversion modules.
4. **Load Switch**: In load switch applications, the FW342-TL-VB can be used to achieve bidirectional current control, suitable for circuits that need to switch high current loads. Its low on-resistance makes it excellent in high current applications, suitable for power switches, battery management and motor control modules.
5. **Audio Amplifier**: The FW342-TL-VB can be used for switch control in audio amplifier circuits to achieve switching and processing of audio signals. Its low on-resistance and high current carrying capacity make it suitable for high-power audio applications, providing stable audio signal transmission.
With its bipolar switching function, low on-resistance and high current handling capability, the FW342-TL-VB MOSFET is widely used in power management, motor drive, DC-DC conversion, load switching and audio amplifier fields, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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