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FW342-TL-E-VB Product details

Product introduction:

1. FW342-TL-E-VB MOSFET Product Introduction

FW342-TL-E-VB is a high-performance dual N+P channel MOSFET in SOP8 package. This MOSFET uses advanced Trench technology to provide low on-resistance and excellent switching performance. Its dual-channel design contains an N-channel and a P-channel transistor, making it very suitable for applications that require positive and negative power switching and efficient current management. This configuration allows the FW342-TL-E-VB to save space and enhance circuit design flexibility while providing high-power switching capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. FW342-TL-E-VB MOSFET Detailed parameter description

- **Package**: SOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**:
- N channel: ±30V
- P channel: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench

Domain and module applications:

III. Application fields and module examples of FW342-TL-E-VB MOSFET

1. **Power management circuit**: The dual N+P channel design of FW342-TL-E-VB makes it very useful in power management circuits, especially for implementing bidirectional switching and power switching functions. Its low on-resistance and high current handling capability can effectively improve the efficiency and reliability of power management systems.

2. **H-bridge motor drive**: In the H-bridge motor drive circuit, FW342-TL-E-VB can be used to control the forward and reverse rotation and speed regulation of the motor. Its dual-channel configuration enables bidirectional control of the motor and is suitable for various DC motor drive applications.

3. **Power switch module**: This MOSFET is suitable for power switch modules that require positive and negative power switching. Its high current carrying capacity and low on-resistance ensure reliability and efficiency in high-power applications.

4. **Inverter circuit**: In the inverter circuit, FW342-TL-E-VB can be used as a switching element to achieve efficient current conversion and control. Its support for high current and low on-resistance makes it suitable for use in high-power inverters and power converters.

5. **Battery protection circuit**: FW342-TL-E-VB can also be used in battery protection circuits to provide overcurrent protection and switch control functions. Its dual-channel design allows multiple battery management functions to be implemented in the same package, improving the integration and reliability of the system.

In general, the dual N+P channel design of the FW342-TL-E-VB MOSFET, as well as its excellent switching performance and low on-resistance, enable it to perform well in multiple application areas such as power management, motor drive, power switch modules, inverter circuits, and battery protection, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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