Product introduction：
1. FW274-TL-E-VB MOSFET Product Introduction
FW274-TL-E-VB is a high-performance dual N-channel MOSFET in SOP8 package, designed to provide efficient current control and switching performance. This MOSFET has two independent N-channel MOSFET transistors, suitable for applications requiring high current handling and low on-resistance. Its drain-source voltage (VDS) is 30V, suitable for low-voltage power supplies and switching circuits. The gate-source voltage (VGS) range is ±20V, ensuring stable operation under different driving conditions. The threshold voltage (Vth) is 1.7V, which allows it to be effectively turned on at a lower gate voltage. FW274-TL-E-VB uses Trench technology, and the on-resistance (RDS(ON)) is 26mΩ at VGS of 4.5V and 22mΩ at VGS of 10V, which can support a drain current (ID) of 6.8A/6.0A. This MOSFET is suitable for various circuit designs that require high efficiency and high-density packaging.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
II. Detailed parameter description of FW274-TL-E-VB MOSFET
1. **Package type**: SOP8
2. **Configuration**: Dual-channel N-Channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 22mΩ @ VGS = 10V
7. **Drain current (ID)**:
- 6.8A (Channel 1)
- 6.0A (Channel 2)
8. **Technology**: Trench
9. **Other features**: Dual channel configuration, low on-resistance, high current handling capability, compact package, suitable for high-density circuit design.
Domain and module applications：
3. Application fields and module examples of FW274-TL-E-VB MOSFET
The dual-channel configuration and high-efficiency characteristics of FW274-TL-E-VB MOSFET enable it to excel in the following fields and modules:
1. **Power management**: FW274-TL-E-VB MOSFET can be used in power management modules such as DC-DC converters and power distribution circuits. Its low on-resistance and high current capability help improve power conversion efficiency and reduce power loss, and is suitable for power systems that require high efficiency.
2. **Motor drive**: In motor drive circuits, FW274-TL-E-VB can be used in H-bridge circuits or dual motor control applications. Its high current carrying capacity and dual-channel design enable it to support efficient motor control, ensure smooth motor operation and improve drive efficiency.
3. **LED lighting**: In LED drive circuits, this MOSFET can provide stable current control, suitable for efficient driving of LED lamps. Its low on-resistance and high current capability ensure the brightness stability and long service life of the LED.
4. **Consumer Electronics**: FW274-TL-E-VB is also suitable for a variety of consumer electronics such as smartphones, tablets and portable devices. In these devices, this MOSFET can be used in power switching and management circuits, supporting compact circuit design and ensuring reliable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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