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FW261-TL-E-VB Product details

Product introduction:

1. FW261-TL-E-VB MOSFET Product Introduction

FW261-TL-E-VB is a high-performance dual N-channel MOSFET in SOP8 package. This MOSFET uses advanced Trench technology to provide low on-resistance and excellent switching characteristics. It is designed to meet the requirements of high efficiency and high-density integration, and is suitable for various applications that require efficient current management and switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A 22mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 6.8/6.0A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. Detailed parameter description of FW261-TL-E-VB MOSFET

- **Package form**: SOP8
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Maximum drain current (ID)**:
- 6.8A (first N-channel)
- 6.0A (second N-channel)
- **Technology**: Trench

Domain and module applications:

3. FW261-TL-E-VB MOSFET Application Fields and Module Examples

1. **DC-DC Converter**: FW261-TL-E-VB is suitable for use in DC-DC converters, especially in applications that require efficient current switching. Its low on-resistance and high current handling capability help improve conversion efficiency, reduce power loss, and optimize power management.

2. **Power Management System**: In power management systems, FW261-TL-E-VB can be used as an efficient switching element to control current flow and distribution. Its dual-channel design enables it to provide multiple switching channels in a limited space, suitable for power distribution and switch control applications.

3. **LED Driver**: This MOSFET is also suitable for LED driver circuits to control the switching and brightness adjustment of LEDs. Its low on-resistance can reduce power loss, improve overall energy efficiency, and make LED lighting systems more efficient and reliable.

4. **Battery Management**: In a battery management system, the FW261-TL-E-VB can be used to control the battery charging and discharging process. Its high current handling capability and low on-resistance can effectively manage the current flow of the battery, ensuring the stability and efficiency of the system.

5. **Power Switch Module**: Due to its dual N-channel configuration, the FW261-TL-E-VB is suitable for power switch modules, which can provide multiple switch channels in the same package to meet the needs of high-power switching and control.

In summary, the dual N-channel design, high current carrying capacity and low on-resistance of the FW261-TL-E-VB MOSFET enable it to perform well in the fields of DC-DC converters, power management, LED driving, battery management and power switch modules, providing efficient solutions for various power and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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