Product introduction：
1. FW213-TL-E-VB MOSFET Product Introduction
FW213-TL-E-VB is a high-performance dual N-channel MOSFET in SOP8 package, designed for compact circuit design with high-efficiency switching performance. This MOSFET has two independent N-channel MOSFET transistors, which can be used for high-efficiency switching and current control respectively. Its drain-source voltage (VDS) is 30V, suitable for low-voltage applications. The gate-source voltage (VGS) range is ±20V, ensuring stable operation under various drive voltages. The threshold voltage (Vth) is 1.7V, which can be effectively turned on at a lower gate voltage. FW213-TL-E-VB adopts Trench technology, and its on-resistance (RDS(ON)) is 26mΩ at VGS of 4.5V and 22mΩ at VGS of 10V, supporting a drain current (ID) of up to 6.8A/6.0A. This MOSFET performs particularly well in applications requiring high efficiency and high-density packaging.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
II. Detailed parameter description of FW213-TL-E-VB MOSFET
1. **Package type**: SOP8
2. **Configuration**: Dual-channel N-Channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 22mΩ @ VGS = 10V
7. **Drain current (ID)**:
- 6.8A (Channel 1)
- 6.0A (Channel 2)
8. **Technology**: Trench
9. **Other Features**: Dual channel configuration, low on-resistance, high current handling capability, compact package.
Domain and module applications：
3. Application fields and module examples of FW213-TL-E-VB MOSFET
The dual-channel configuration and high-efficiency characteristics of FW213-TL-E-VB MOSFET make it outstanding in many fields and modules:
1. **Power management**: In power management modules, FW213-TL-E-VB can be used for bidirectional switching and current control, suitable for efficient DC-DC converters and power distribution systems. Its low on-resistance reduces power loss and improves the efficiency of the overall system.
2. **Motor drive**: In motor drive systems, this MOSFET can be used for dual motor control or H-bridge circuits to provide stable switching and control capabilities. Its high current carrying capacity is suitable for driving small and medium power motors to ensure smooth operation of the motors.
3. **LED drive**: FW213-TL-E-VB is suitable for LED drive circuits, especially in applications that require precise control and high efficiency. Its low on-resistance and high current capability can improve the performance of LED lamps and extend their service life.
4. **Consumer Electronics**: In various consumer electronics products, such as smartphones, tablets, etc., FW213-TL-E-VB can be used for power switching and current protection functions, supporting compact circuit design and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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