FU9N20D-VB Product details
Product introduction:
FU9N20D-VB is a high-voltage N-Channel MOSFET in TO251 package, designed for applications requiring medium current and high voltage handling capabilities. The device uses Trench technology, providing good switching performance and voltage resistance, suitable for high-voltage application scenarios such as power conversion and drive circuits. The maximum drain-source voltage of FU9N20D-VB is 200V, the gate-source voltage is ±20V, the threshold voltage is 3V, the on-resistance is 270mΩ (@ VGS=10V), and the maximum drain current is 8A. The device performs well in applications requiring high voltage resistance, stable performance, and medium current handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology type**: Trench technology
Domain and module applications:
1. **Switching Power Supply (SMPS)**: FU9N20D-VB is very suitable for use in switching power supplies (SMPS), especially in circuits that require high voltage handling capabilities. Its 200V drain-source voltage and stable conduction performance ensure efficient energy transfer and reliability during power conversion.
2. **High-voltage battery protection circuit**: In high-voltage battery management systems, FU9N20D-VB can be used to protect batteries from overvoltage damage. Its high voltage tolerance and medium current handling capabilities make it suitable for a variety of high-voltage battery packs and battery protection modules.
3. **Lighting driver**: This MOSFET can be used in high-voltage LED drivers, especially in lighting systems that require higher input voltages. Its good switching performance can effectively control the brightness and switching state of the LED, improving the overall efficiency of the lighting system.
4. **Inverter**: In the inverter circuit, FU9N20D-VB can be used as the main switching element to convert DC power to AC power. Its high withstand voltage characteristics make it excellent in inverter applications that need to handle higher voltages.
5. **Industrial Control Equipment**: FU9N20D-VB is suitable for various high-voltage switching circuits and drive circuits in industrial control systems. Its high voltage and medium current capabilities enable it to reliably control and manage power distribution in industrial equipment.
With its high withstand voltage and reliable switching performance, FU9N20D-VB MOSFET is suitable for a variety of high-voltage and medium-current applications, providing a reliable solution for power conversion, battery management and industrial control systems.
Technical support:
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