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FU9024NC-VB Product details
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Product Introduction: FU9024NC-VB
FU9024NC-VB is a high-efficiency P-type MOSFET in a TO251 package suitable for circuits that require high current handling capabilities. The device has a drain-source voltage (VDS) of -60V and can handle a drain current of up to -20A. Its gate threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate-source voltage. FU9024NC-VB uses advanced Trench technology to provide a low on-resistance of 66mΩ at a gate-source voltage of 10V, thereby improving switching efficiency and reducing power consumption. This MOSFET is ideal for use in power management, motor drives, and various modules that require efficient switching.
FU9024NC-VB is a high-efficiency P-type MOSFET in a TO251 package suitable for circuits that require high current handling capabilities. The device has a drain-source voltage (VDS) of -60V and can handle a drain current of up to -20A. Its gate threshold voltage (Vth) is -1.7V, ensuring that it can be turned on at a lower gate-source voltage. FU9024NC-VB uses advanced Trench technology to provide a low on-resistance of 66mΩ at a gate-source voltage of 10V, thereby improving switching efficiency and reducing power consumption. This MOSFET is ideal for use in power management, motor drives, and various modules that require efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
1. **Package**: TO251
- The TO251 package provides good heat dissipation and compact size, suitable for high-density circuit design.
2. **Configuration**: Single-channel P-type
- The single-channel P-type MOSFET design is suitable for load switching and power management applications that require efficient current control.
3. **Drain-source voltage (VDS)**: -60V
- The maximum drain-source voltage is -60V, suitable for medium and low voltage applications such as power management and load switching.
4. **Gate-source voltage (VGS)**: ±20V
- The wide range of gate-source voltage enables it to cope with different control voltage requirements.
5. **Threshold voltage (Vth)**: -1.7V
- The low threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving the switching response speed.
6. **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=4.5V
- 66mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves device efficiency.
7. **Drain current (ID)**: -20A
- Maximum drain current is -20A, suitable for high current applications.
8. **Technology**: Trench
- Trench technology improves the current handling capability and conduction performance of MOSFETs, especially for high-efficiency switching applications.
1. **Package**: TO251
- The TO251 package provides good heat dissipation and compact size, suitable for high-density circuit design.
2. **Configuration**: Single-channel P-type
- The single-channel P-type MOSFET design is suitable for load switching and power management applications that require efficient current control.
3. **Drain-source voltage (VDS)**: -60V
- The maximum drain-source voltage is -60V, suitable for medium and low voltage applications such as power management and load switching.
4. **Gate-source voltage (VGS)**: ±20V
- The wide range of gate-source voltage enables it to cope with different control voltage requirements.
5. **Threshold voltage (Vth)**: -1.7V
- The low threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving the switching response speed.
6. **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=4.5V
- 66mΩ @ VGS=10V
- Low on-resistance reduces power loss and improves device efficiency.
7. **Drain current (ID)**: -20A
- Maximum drain current is -20A, suitable for high current applications.
8. **Technology**: Trench
- Trench technology improves the current handling capability and conduction performance of MOSFETs, especially for high-efficiency switching applications.
Domain and module applications：
Applicable fields and modules
1. **Power management**: The FU9024NC-VB is well suited for applications in power management modules, such as DC-DC converters and regulators. These applications require efficient switching elements to control the flow of power, and the low on-resistance and high current handling capability of the FU9024NC-VB make it an ideal choice.
2. **Motor drive**: In motor drive modules, especially low-voltage motors that require precise control, the FU9024NC-VB provides reliable performance. Its P-type characteristics allow for effective control of the current direction, ensuring that the motor can run smoothly with lower power consumption.
3. **Load switch**: This MOSFET is suitable for use in high-efficiency load switching applications, especially those that need to handle medium voltages and high currents. The FU9024NC-VB is able to provide low losses and high efficiency in load switching, making it suitable for use in portable devices, power switches, and battery management systems.
4. **Inverters and converters**: In inverters and converters that require efficient conversion, FU9024NC-VB provides excellent switching performance. Its low RDS(ON) characteristics reduce conduction losses and improve overall system efficiency and stability.
5. **Communication equipment**: In power amplifiers and power control modules of communication equipment, the performance advantages of FU9024NC-VB can significantly improve the reliability and power efficiency of equipment and ensure the stable operation of communication systems.
FU9024NC-VB is a versatile P-type MOSFET that is particularly suitable for areas that require efficient switching and high current handling capabilities, such as power management, motor drives, and load switches. Its low on-resistance and high current carrying capacity ensure stability and high efficiency in various application scenarios.
1. **Power management**: The FU9024NC-VB is well suited for applications in power management modules, such as DC-DC converters and regulators. These applications require efficient switching elements to control the flow of power, and the low on-resistance and high current handling capability of the FU9024NC-VB make it an ideal choice.
2. **Motor drive**: In motor drive modules, especially low-voltage motors that require precise control, the FU9024NC-VB provides reliable performance. Its P-type characteristics allow for effective control of the current direction, ensuring that the motor can run smoothly with lower power consumption.
3. **Load switch**: This MOSFET is suitable for use in high-efficiency load switching applications, especially those that need to handle medium voltages and high currents. The FU9024NC-VB is able to provide low losses and high efficiency in load switching, making it suitable for use in portable devices, power switches, and battery management systems.
4. **Inverters and converters**: In inverters and converters that require efficient conversion, FU9024NC-VB provides excellent switching performance. Its low RDS(ON) characteristics reduce conduction losses and improve overall system efficiency and stability.
5. **Communication equipment**: In power amplifiers and power control modules of communication equipment, the performance advantages of FU9024NC-VB can significantly improve the reliability and power efficiency of equipment and ensure the stable operation of communication systems.
FU9024NC-VB is a versatile P-type MOSFET that is particularly suitable for areas that require efficient switching and high current handling capabilities, such as power management, motor drives, and load switches. Its low on-resistance and high current carrying capacity ensure stability and high efficiency in various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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