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FU8203-VB Product details
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Product Introduction
FU8203-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. Manufactured using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, designed to provide excellent switching performance and current management. Its design optimizes power conversion efficiency and is suitable for electronic circuits and power management systems that require high efficiency.
FU8203-VB is a high-performance N-Channel MOSFET in TO251 package, designed for low voltage and high current applications. Manufactured using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, designed to provide excellent switching performance and current management. Its design optimizes power conversion efficiency and is suitable for electronic circuits and power management systems that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: FU8203-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: FU8203-VB
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application Fields and Modules
FU8203-VB MOSFET is suitable for efficient power management and switching applications that require low voltage and high current. Its low on-resistance and high current capability make it very suitable for use in efficient power converters, DC-DC conversion modules, and high-current load switching circuits. In the power management system of electric vehicles, it can stably handle high current demands and improve system efficiency. In addition, this MOSFET is also widely used in motor drive systems, high-performance computer power supplies, and various high-power electronic devices, providing excellent current management and efficient switching performance to ensure the stability and reliability of the system.
FU8203-VB MOSFET is suitable for efficient power management and switching applications that require low voltage and high current. Its low on-resistance and high current capability make it very suitable for use in efficient power converters, DC-DC conversion modules, and high-current load switching circuits. In the power management system of electric vehicles, it can stably handle high current demands and improve system efficiency. In addition, this MOSFET is also widely used in motor drive systems, high-performance computer power supplies, and various high-power electronic devices, providing excellent current management and efficient switching performance to ensure the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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