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FU5410-VB Product details
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1. FU5410-VB MOSFET Product Introduction
FU5410-VB is a high-performance P-channel MOSFET in TO251 package, designed for medium and high voltage load switching applications. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) range of ±20V, supporting flexible gate drive. Its threshold voltage (Vth) is -2V, ensuring that it can be effectively turned on at a relatively low gate voltage. FU5410-VB uses Trench technology and has a low on-resistance. At a gate drive voltage of 4.5V, its on-resistance (RDS(ON)) is 120mΩ, and at a gate drive voltage of 10V it is 100mΩ, and the maximum drain current (ID) is -16A. Its design goal is to provide excellent switching performance and stability, and is suitable for application scenarios requiring high voltage and high current.
FU5410-VB is a high-performance P-channel MOSFET in TO251 package, designed for medium and high voltage load switching applications. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) range of ±20V, supporting flexible gate drive. Its threshold voltage (Vth) is -2V, ensuring that it can be effectively turned on at a relatively low gate voltage. FU5410-VB uses Trench technology and has a low on-resistance. At a gate drive voltage of 4.5V, its on-resistance (RDS(ON)) is 120mΩ, and at a gate drive voltage of 10V it is 100mΩ, and the maximum drain current (ID) is -16A. Its design goal is to provide excellent switching performance and stability, and is suitable for application scenarios requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
II. FU5410-VB MOSFET detailed parameter description
1. **Package type**: TO251
2. **Configuration**: Single channel P-Channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
7. **Drain current (ID)**: -16A
8. **Technology**: Trench
9. **Other features**: Low on-resistance, suitable for high voltage and high current applications.
1. **Package type**: TO251
2. **Configuration**: Single channel P-Channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
7. **Drain current (ID)**: -16A
8. **Technology**: Trench
9. **Other features**: Low on-resistance, suitable for high voltage and high current applications.
Domain and module applications：
III. FU5410-VB MOSFET Application Fields and Module Examples
FU5410-VB MOSFET is suitable for use in the following fields and modules due to its high voltage tolerance and good current handling characteristics:
1. **Power Management Module**: In the power management module, FU5410-VB can be used as a high voltage switch to control the switching operation of the power supply. Its low on-resistance helps to improve power efficiency and reduce power loss, making it suitable for power protection and power distribution.
2. **Inverter and Power Converter**: In inverter and power converter, FU5410-VB can be used for switching control of high voltage loads, supporting voltages up to 100V, ensuring stable operation of the inverter and efficient power conversion.
3. **Load Switch and Battery Management**: In load switches and battery management systems, this MOSFET can effectively manage the flow of current, especially in scenarios that require high voltage and large current handling, such as battery protection circuits and load switching modules.
4. **Automotive Electronics**: In automotive electronic systems, FU5410-VB is suitable for battery management and power switching applications. It can handle high voltage and provide stable switching performance to ensure the safety and reliability of automotive electronic systems.
FU5410-VB MOSFET is suitable for use in the following fields and modules due to its high voltage tolerance and good current handling characteristics:
1. **Power Management Module**: In the power management module, FU5410-VB can be used as a high voltage switch to control the switching operation of the power supply. Its low on-resistance helps to improve power efficiency and reduce power loss, making it suitable for power protection and power distribution.
2. **Inverter and Power Converter**: In inverter and power converter, FU5410-VB can be used for switching control of high voltage loads, supporting voltages up to 100V, ensuring stable operation of the inverter and efficient power conversion.
3. **Load Switch and Battery Management**: In load switches and battery management systems, this MOSFET can effectively manage the flow of current, especially in scenarios that require high voltage and large current handling, such as battery protection circuits and load switching modules.
4. **Automotive Electronics**: In automotive electronic systems, FU5410-VB is suitable for battery management and power switching applications. It can handle high voltage and provide stable switching performance to ensure the safety and reliability of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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