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FU5305-VB Product details
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1. FU5305-VB MOSFET Product Introduction
FU5305-VB is a high-voltage P-channel MOSFET in TO251 package, designed for load switching and power management applications. It is manufactured using Trench technology, providing low on-resistance and good switching performance, and is particularly suitable for applications requiring high current and high voltage. FU5305-VB performs well in negative voltage environments and is suitable for a variety of electronic devices that require high power and high efficiency.
FU5305-VB is a high-voltage P-channel MOSFET in TO251 package, designed for load switching and power management applications. It is manufactured using Trench technology, providing low on-resistance and good switching performance, and is particularly suitable for applications requiring high current and high voltage. FU5305-VB performs well in negative voltage environments and is suitable for a variety of electronic devices that require high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. FU5305-VB MOSFET Detailed parameter description
- **Package form**: TO251
- **Configuration**: Unipolar-P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 17mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench
- **Package form**: TO251
- **Configuration**: Unipolar-P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 17mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
III. FU5305-VB MOSFET Application Fields and Module Examples
1. **Power Switch**: FU5305-VB is suitable for high current power switch applications, especially power management in negative voltage environments. Its low on-resistance and high withstand voltage ensure stable and reliable operation in high power switching operations, reducing power loss.
2. **Motor Drive**: In motor drive circuits, this MOSFET can be used as a high power load switch to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance make it suitable for use in motor drive systems, ensuring smooth operation of the motor under negative voltage conditions.
3. **Inverter**: FU5305-VB performs well in photovoltaic inverters or other high power inverter applications, capable of handling high voltages and high currents, ensuring high efficiency and reliability of the inverter. Its low on-resistance reduces the energy loss of the system and improves the overall efficiency of the inverter.
4. **Power Management System**: In various power management systems, such as power distribution modules and battery management systems, FU5305-VB provides efficient current control. Its low on-resistance and high current capability ensure high performance and system stability in high power environments.
In summary, the high withstand voltage and low on-resistance of FU5305-VB MOSFET make it an ideal choice for power switches, motor drives, inverters and power management systems, providing reliable switching and control performance under negative voltage and high current conditions.
1. **Power Switch**: FU5305-VB is suitable for high current power switch applications, especially power management in negative voltage environments. Its low on-resistance and high withstand voltage ensure stable and reliable operation in high power switching operations, reducing power loss.
2. **Motor Drive**: In motor drive circuits, this MOSFET can be used as a high power load switch to control the start, stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance make it suitable for use in motor drive systems, ensuring smooth operation of the motor under negative voltage conditions.
3. **Inverter**: FU5305-VB performs well in photovoltaic inverters or other high power inverter applications, capable of handling high voltages and high currents, ensuring high efficiency and reliability of the inverter. Its low on-resistance reduces the energy loss of the system and improves the overall efficiency of the inverter.
4. **Power Management System**: In various power management systems, such as power distribution modules and battery management systems, FU5305-VB provides efficient current control. Its low on-resistance and high current capability ensure high performance and system stability in high power environments.
In summary, the high withstand voltage and low on-resistance of FU5305-VB MOSFET make it an ideal choice for power switches, motor drives, inverters and power management systems, providing reliable switching and control performance under negative voltage and high current conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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