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FU430A-VB Product details
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Product Introduction: FU430A-VB
FU430A-VB is a high-voltage single-channel N-type MOSFET in TO251 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 650V, this MOSFET can handle higher voltages while supporting a maximum drain current of 5A. Its threshold voltage is 3.5V, and it has an on-resistance of 950mΩ at a gate-source voltage of 10V. FU430A-VB uses SJ_Multi-EPI technology, which improves the current carrying capacity and conduction performance of the device. This MOSFET is suitable for high-voltage power switching and power management applications, and can provide reliable switching performance in high voltage environments.
FU430A-VB is a high-voltage single-channel N-type MOSFET in TO251 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 650V, this MOSFET can handle higher voltages while supporting a maximum drain current of 5A. Its threshold voltage is 3.5V, and it has an on-resistance of 950mΩ at a gate-source voltage of 10V. FU430A-VB uses SJ_Multi-EPI technology, which improves the current carrying capacity and conduction performance of the device. This MOSFET is suitable for high-voltage power switching and power management applications, and can provide reliable switching performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- The TO251 package is designed as a miniaturized package with good heat dissipation capability, suitable for various medium-sized circuit boards.
2. **Configuration**: Single-channel N-type
- Single-channel N-type MOSFET is suitable for high-efficiency switching and power control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high-voltage circuits such as high-voltage switching and power conversion circuits.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V, suitable for a wide range of control voltage applications.
5. **Threshold voltage (Vth)**: 3.5V
- The threshold voltage of 3.5V ensures that the MOSFET is reliably turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
- Relatively high on-resistance is suitable for low power applications and ensures stability in high voltage environments.
7. **Drain current (ID)**: 5A
- Maximum drain current is 5A, suitable for medium current applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the current carrying capacity and conduction performance of the MOSFET, especially for high voltage and high current applications.
1. **Package**: TO251
- The TO251 package is designed as a miniaturized package with good heat dissipation capability, suitable for various medium-sized circuit boards.
2. **Configuration**: Single-channel N-type
- Single-channel N-type MOSFET is suitable for high-efficiency switching and power control applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high-voltage circuits such as high-voltage switching and power conversion circuits.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate-source voltage range of ±30V, suitable for a wide range of control voltage applications.
5. **Threshold voltage (Vth)**: 3.5V
- The threshold voltage of 3.5V ensures that the MOSFET is reliably turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 950mΩ @ VGS=10V
- Relatively high on-resistance is suitable for low power applications and ensures stability in high voltage environments.
7. **Drain current (ID)**: 5A
- Maximum drain current is 5A, suitable for medium current applications.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology improves the current carrying capacity and conduction performance of the MOSFET, especially for high voltage and high current applications.
Domain and module applications：
Applications and modules
1. **High-voltage power switch**: FU430A-VB is ideal for high-voltage power switch applications due to its high drain-source voltage (650V). It is able to operate stably in high-voltage environments and is commonly used in power adapters and switch mode power supplies (SMPS) to achieve efficient voltage conversion and stable power output.
2. **Power management**: In power management circuits such as power conditioners and voltage regulators, FU430A-VB is able to provide reliable switching performance. Its high voltage carrying capability and moderate on-resistance make it suitable for use in high-voltage power conditioning and power control systems.
3. **Inverter**: FU430A-VB performs well in high-voltage inverters, such as solar inverters and uninterruptible power supplies (UPS). Its high voltage and current handling capabilities ensure high efficiency and reliability of inverter systems.
4. **Industrial Motor Drive**: This MOSFET is suitable for industrial motor drive systems, especially in motor control systems that require high voltage drive. The high voltage capability of FU430A-VB enables it to handle the high voltage requirements in motor control.
5. **High Power Switch**: FU430A-VB is also suitable for high power switching applications such as high voltage load control and power switching. Its high voltage carrying capability and high on-resistance provide stable switching performance and are suitable for a variety of high power switch modules.
FU430A-VB provides stable performance in applications requiring high voltage and medium current, especially in high voltage power switching and power management systems, ensuring high efficiency and reliability of the system.
1. **High-voltage power switch**: FU430A-VB is ideal for high-voltage power switch applications due to its high drain-source voltage (650V). It is able to operate stably in high-voltage environments and is commonly used in power adapters and switch mode power supplies (SMPS) to achieve efficient voltage conversion and stable power output.
2. **Power management**: In power management circuits such as power conditioners and voltage regulators, FU430A-VB is able to provide reliable switching performance. Its high voltage carrying capability and moderate on-resistance make it suitable for use in high-voltage power conditioning and power control systems.
3. **Inverter**: FU430A-VB performs well in high-voltage inverters, such as solar inverters and uninterruptible power supplies (UPS). Its high voltage and current handling capabilities ensure high efficiency and reliability of inverter systems.
4. **Industrial Motor Drive**: This MOSFET is suitable for industrial motor drive systems, especially in motor control systems that require high voltage drive. The high voltage capability of FU430A-VB enables it to handle the high voltage requirements in motor control.
5. **High Power Switch**: FU430A-VB is also suitable for high power switching applications such as high voltage load control and power switching. Its high voltage carrying capability and high on-resistance provide stable switching performance and are suitable for a variety of high power switch modules.
FU430A-VB provides stable performance in applications requiring high voltage and medium current, especially in high voltage power switching and power management systems, ensuring high efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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